Contact engineering of GaN-on-silicon power devices for breakdown voltage enhancement

2013 ◽  
Vol 28 (7) ◽  
pp. 074018 ◽  
Author(s):  
Yu-Syuan Lin ◽  
Yi-Wei Lian ◽  
Jui-Ming Yang ◽  
Hou-Cheng Lu ◽  
Yen-Chieh Huang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Power Devices ◽  
Silicon Power Devices ◽  
Contact Engineering

scholarly journals The Optimal Design of Trench Field Rings for High Breakdown Voltage

2011 ◽  
Vol 2-3 ◽  
pp. 1047-1050
Author(s):  
Ey Goo Kang ◽  
Sung Young Hong ◽  
Byoung Sub Ahn
Keyword(s):  
Optimal Design ◽  
Breakdown Voltage ◽  
Power Devices ◽  
High Breakdown Voltage ◽  
Process Simulations ◽  
Trench Width ◽  
Conventional Field

The trench field ring for breakdown voltage of power devices is proposed. The new ring can improve 10% efficiency comparing with conventional field ring. Five parameters of trench field ring for design of trench field ring are analyzed and 2-D devices simulation and process simulations are carried out. The number of field ring, juction depth, distance of field rings, trench width, doping profiled are discussed. The proposed trench field ring was better for higher voltage more than 1000V.

Breakdown voltage modeling in mesa power devices

1983 ◽  
Vol 75 (1) ◽  
pp. 207-217 ◽  
Author(s):  
J. P. Gourret ◽  
J. Paille
Keyword(s):  
Breakdown Voltage ◽  
Power Devices

Wide Band Gap Semiconductor Technology for Energy Efficiency

2016 ◽  
Vol 858 ◽  
pp. 797-802 ◽  
Author(s):  
Anant Agarwal ◽  
Woong Je Sung ◽  
Laura Marlino ◽  
Pawel Gradzki ◽  
John Muth ◽  
...  
Keyword(s):  
Cost Reduction ◽  
Wide Band ◽  
Wide Bandgap ◽  
Department Of Energy ◽  
Semiconductor Technology ◽  
Power Devices ◽  
Wide Band Gap ◽  
Efficient Energy ◽  
Greenhouse Gas Reduction ◽  
Silicon Power Devices

The attributes and benefits of wide-bandgap (WBG) semiconductors are rapidly becoming known, as their use in power electronics applications continues to gain industry acceptance. However, hurdles still exist in achieving widespread market acceptance, on a par with traditional silicon power devices. Primary challenges include reducing device costs and the expansion of a workforce trained in their use. The Department of Energy (DOE) is actively fostering development activities to expand application spaces, achieve acceptable cost reduction targets and grow the acceptance of WBG devices to realize DOEs core missions of more efficient energy generation, greenhouse gas reduction and energy security within the U.S. This paper discusses currently funded activities and application areas that are suitable for WBG introduction. A detailed cost roadmap for SiC device introduction is also presented.

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