Atomistic Mechanism of 4 H - SiC/SiO2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices

2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Peng Dong ◽  
Pei Li ◽  
Lin Zhang ◽  
Haoshu Tan ◽  
Zechen Hu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Power Devices ◽  
Carrier Trapping ◽  
Voltage Degradation ◽  
Trapping Effects

scholarly journals The Optimal Design of Trench Field Rings for High Breakdown Voltage

2011 ◽  
Vol 2-3 ◽  
pp. 1047-1050
Author(s):  
Ey Goo Kang ◽  
Sung Young Hong ◽  
Byoung Sub Ahn
Keyword(s):  
Optimal Design ◽  
Breakdown Voltage ◽  
Power Devices ◽  
High Breakdown Voltage ◽  
Process Simulations ◽  
Trench Width ◽  
Conventional Field

The trench field ring for breakdown voltage of power devices is proposed. The new ring can improve 10% efficiency comparing with conventional field ring. Five parameters of trench field ring for design of trench field ring are analyzed and 2-D devices simulation and process simulations are carried out. The number of field ring, juction depth, distance of field rings, trench width, doping profiled are discussed. The proposed trench field ring was better for higher voltage more than 1000V.

scholarly journals Voltage Degradation Model of Thin Film Capacitors

1985 ◽  
Vol 12 (1) ◽  
pp. 63-70
Author(s):  
T. M. Berlicki
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Breakdown Voltage ◽  
Short Term ◽  
Degradation Model ◽  
Damage Rate ◽  
Thin Film Capacitors ◽  
Voltage Degradation ◽  
Critical Damage

A degradation model of thin film capacitors is presented. This model takes into consideration that: (a) the damage rate dD/dt is a function of the damage value D, and (b) the critical damage Dcis a function of working voltage. On the base of this model, the short term breakdown voltage and its distribution is defined. The experimental data presented conforms with the described model.

Breakdown voltage modeling in mesa power devices

1983 ◽  
Vol 75 (1) ◽  
pp. 207-217 ◽  
Author(s):  
J. P. Gourret ◽  
J. Paille
Keyword(s):  
Breakdown Voltage ◽  
Power Devices

scholarly journals Carrier trapping effects on photoluminescence decay time in InGaN∕GaN quantum wells with nanocluster structures

2007 ◽  
Vol 101 (6) ◽  
pp. 063511 ◽  
Author(s):  
Yen-Cheng Lu ◽  
Cheng-Yen Chen ◽  
Hsiang-Chen Wang ◽  
C. C. Yang ◽  
Yung-Chen Cheng
Keyword(s):  
Quantum Wells ◽  
Decay Time ◽  
Carrier Trapping ◽  
Photoluminescence Decay ◽  
Trapping Effects

Investigation of breakdown voltage degradation in low-voltage narrow gate trench MOSFET by edge termination optimization

2021 ◽  
Vol 36 (11) ◽  
pp. 115014
Author(s):  
Zhengkang Wang ◽  
Ming Qiao ◽  
Dong Fang ◽  
Kui Xiao ◽  
Sen Zhang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Low Voltage ◽  
Edge Termination ◽  
Voltage Degradation

TID-Induced Breakdown Voltage Degradation in Uniform and Linear Variable Doping SOI p-LDMOSFETs

2020 ◽  
Vol 67 (7) ◽  
pp. 1390-1394
Author(s):  
Lei Shu ◽  
Yuan-Fu Zhao ◽  
Kenneth F. Galloway ◽  
Liang Wang ◽  
Kai Zhao ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Voltage Degradation

Contact engineering of GaN-on-silicon power devices for breakdown voltage enhancement

2013 ◽  
Vol 28 (7) ◽  
pp. 074018 ◽  
Author(s):  
Yu-Syuan Lin ◽  
Yi-Wei Lian ◽  
Jui-Ming Yang ◽  
Hou-Cheng Lu ◽  
Yen-Chieh Huang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Power Devices ◽  
Silicon Power Devices ◽  
Contact Engineering

Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD

2014 ◽  
Vol 778-780 ◽  
pp. 791-794 ◽  
Author(s):  
Kohei Ebihara ◽  
Yasuki Yamamoto ◽  
Yoshiyuki Nakaki ◽  
Sunao Aya ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Breakdown Voltage ◽  
Reverse Bias ◽  
Parallel Plane ◽  
Power Devices ◽  
Edge Termination ◽  
Varying Thickness ◽  
High Breakdown Voltage ◽  
Tcad Simulation

Edge termination guaranteeing high breakdown voltage and robustness in its fabrication are required in SiC power devices. We newly employed the VLD edge termination for 3.3 kV-rated SiC SBDs, which was formed by Al ion implantation using a resist mask having a varying thickness. The breakdown voltage is recorded to be over 96% of the parallel-plane breakdown voltage, and the reverse bias characteristics are well accorded with the result of TCAD simulation.

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