The Extent of Ionic Binding in Cadmium Telluride

1959 ◽  
Vol 74 (4) ◽  
pp. 490-491 ◽  
Author(s):  
T S Moss
Author(s):  
T. J. Magee ◽  
J. Peng ◽  
J. Bean

Cadmium telluride has become increasingly important in a number of technological applications, particularly in the area of laser-optical components and solid state devices, Microstructural characterizations of the material have in the past been somewhat limited because of the lack of suitable sample preparation and thinning techniques. Utilizing a modified jet thinning apparatus and a potassium dichromate-sulfuric acid thinning solution, a procedure has now been developed for obtaining thin contamination-free samples for TEM examination.


Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.


1997 ◽  
Vol 7 (7) ◽  
pp. 1505-1514 ◽  
Author(s):  
S. Hildebrandt ◽  
H. Uniewski ◽  
J. Schreiber ◽  
H. S. Leipner
Keyword(s):  

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-297-C4-304 ◽  
Author(s):  
B. Sieber ◽  
M. Dupuy
Keyword(s):  

2012 ◽  
Vol 2 (3) ◽  
pp. 368-370
Author(s):  
Rasha A Abdullah ◽  
◽  
Nada M Saeed ◽  
Hussain Kh. Al Khalid ◽  
Mohammed A Razooqi

2016 ◽  
Vol 12 (1) ◽  
pp. 4145-4147
Author(s):  
S. Javad Mousavi

Cadmium telluride crystals (CdTe) have been grown by the sublimation method. The crystal polarity of the CdTe with the zincblend structure has been studied. Two different crystallographic defect and etch pits are revealed on the (111) Cd and  Te surfaces by different etchant.


IEEE Access ◽  
2021 ◽  
Vol 9 ◽  
pp. 49912-49919
Author(s):  
Sandun Jayarathna ◽  
Md Foiez Ahmed ◽  
Liam O'ryan ◽  
Hem Moktan ◽  
Yonggang Cui ◽  
...  

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