On the binding energies of excitons in polar quantum well structures in a weak electric field

2005 ◽  
Vol 14 (11) ◽  
pp. 2314-2319 ◽  
Author(s):  
Wu Yun-Feng ◽  
Liang Xi-Xia ◽  
K. K Bajaj
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Binding Energies ◽  
Weak Electric Field ◽  
Quantum Well Structures

Electric field dependence of optical absorption near the band gap of quantum-well structures

1985 ◽  
Vol 32 (2) ◽  
pp. 1043-1060 ◽  
Author(s):  
D. A. B. Miller ◽  
D. S. Chemla ◽  
T. C. Damen ◽  
A. C. Gossard ◽  
W. Wiegmann ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Band Gap ◽  
Field Dependence ◽  
Quantum Well Structures ◽  
Electric Field Dependence

Electric-field-induced exciton transport in coupled quantum well structures

1996 ◽  
Vol 40 (1-8) ◽  
pp. 429-431 ◽  
Author(s):  
M Hagn ◽  
A Zrenner ◽  
G Böhm ◽  
G Weimann
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
Exciton Transport ◽  
Coupled Quantum Well

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

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