Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD

2006 ◽  
Vol 15 (5) ◽  
pp. 1114-1119 ◽  
Author(s):  
Liang Song ◽  
Zhu Hong-Liang ◽  
Pan Jiao-Qing ◽  
Wang Wei
2007 ◽  
Vol 31 ◽  
pp. 132-134
Author(s):  
P. Boonpeng ◽  
S. Panyakeow ◽  
S. Ratanathammaphan

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.


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Roger Lowe-Webb ◽  
Thomas J. Johnson ◽  
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S.M. Jeon ◽  
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Author(s):  
V Yam ◽  
Vinh Le Thanh ◽  
U Compagnon ◽  
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H. Y. Yeo ◽  
I. Yun ◽  
J. Y. Leem ◽  
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2021 ◽  
Vol 1723 (1) ◽  
pp. 012037
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M Reséndiz-Chincoya

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