Photoluminescence study of in situ annealed InAs quantum dots: Double-peak emission associated with bimodal size distribution

1998 ◽  
Vol 73 (24) ◽  
pp. 3556-3558 ◽  
Author(s):  
Hao Lee ◽  
Roger Lowe-Webb ◽  
Thomas J. Johnson ◽  
Weidong Yang ◽  
Peter C. Sercel
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Double Peak ◽  
Bimodal Size Distribution ◽  
Inas Quantum Dots ◽  
Photoluminescence Study ◽  
Peak Emission

Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution

2000 ◽  
Vol 9 (5) ◽  
pp. 384-388 ◽  
Author(s):  
Guo Zhong-sheng ◽  
Wang Hai-long ◽  
Ning Dong ◽  
Feng Song-lin
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Bimodal Size Distribution ◽  
Photoluminescence Study ◽  
Self Organized

Photoluminescence study of a bimodal size distribution of Ge/Si(001) quantum dots

2001 ◽  
Vol 63 (3) ◽  
Author(s):  
V. Yam ◽  
Vinh Le Thanh ◽  
Y. Zheng ◽  
P. Boucaud ◽  
D. Bouchier
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Bimodal Size Distribution ◽  
Photoluminescence Study

Size distribution effects on self-assembled InAs quantum dots

2007 ◽  
Vol 18 (S1) ◽  
pp. 191-194 ◽  
Author(s):  
S. I. Jung ◽  
H. Y. Yeo ◽  
I. Yun ◽  
J. Y. Leem ◽  
I. K. Han ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Inas Quantum Dots ◽  
Self Assembled

Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates

2008 ◽  
Vol 93 (10) ◽  
pp. 101908 ◽  
Author(s):  
P. Atkinson ◽  
S. Kiravittaya ◽  
M. Benyoucef ◽  
A. Rastelli ◽  
O. G. Schmidt
Keyword(s):  
Quantum Dots ◽  
Controlled Growth ◽  
Patterned Substrates ◽  
Inas Quantum Dots

Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1245-L1248 ◽  
Author(s):  
Koichi Yamaguchi ◽  
Kunihiko Yujobo ◽  
Toshiyuki Kaizu
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Narrow Size Distribution ◽  
Inas Quantum Dots

Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage

2000 ◽  
Vol 62 (11) ◽  
pp. 7213-7218 ◽  
Author(s):  
H. Kissel ◽  
U. Müller ◽  
C. Walther ◽  
W. T. Masselink ◽  
Yu. I. Mazur ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Inas Quantum Dots ◽  
Self Assembled

Initial Stages of InAs Quantum Dots Evolution in GaAs/AlAs Matrixes

2002 ◽  
Vol 749 ◽  
Author(s):  
Michael Yakimov ◽  
Vadim Tokranov ◽  
Alex Katnelson ◽  
Serge Oktyabrsky
Keyword(s):  
Quantum Dots ◽  
Direct Evidence ◽  
Matrix Material ◽  
Single Layer ◽  
High Energy ◽  
Inas Quantum Dots ◽  
Auger Signal ◽  
The Matrix ◽  
Growth Evolution

ABSTRACTWe have studied the first phases of post-growth evolution of InAs quantum dots (QDs) using in-situ Auger electron spectroscopy in conjunction with Reflection High Energy Electron Diffraction (RHEED). Direct evidence for InAs intermixing with about 6ML (monolayers) of the matrix material is found from Auger signal behavior during MBE overgrowth of InAs nanostructures. Re-establishment of 2D growth mode by overgrowth with GaAs or AlAs was monitored in single-layer and multi-layer QD structures using RHEED. Decay process of InAs QDs on the surface is found to have activation energy of about 1.1 eV that corresponds to In intermixing with the matrix rather than evaporation from the surface.

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