Long wavelength vertically stacked InAs/GaAs(001) quantum dots with a bimodal size distribution: Optical properties and electronic coupling

2004 ◽  
Vol 36 (1-3) ◽  
pp. 55-61 ◽  
Author(s):  
B. Ilahi ◽  
L. Sfaxi ◽  
H. Maaref ◽  
G. Bremond ◽  
G. Guillot
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Size Distribution ◽  
Electronic Coupling ◽  
Bimodal Size Distribution ◽  
Long Wavelength

Effect of the bimodal size distribution on the optical properties of self-assembled Ge/Si(001) quantum dots

2000 ◽  
Vol 380 (1-2) ◽  
pp. 78-81 ◽  
Author(s):  
V Yam ◽  
Vinh Le Thanh ◽  
U Compagnon ◽  
U Gennser ◽  
P Boucaud ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Size Distribution ◽  
Bimodal Size Distribution ◽  
Self Assembled

scholarly journals Near-field spectroscopy of bimodal size distribution of InAs∕AlGaAs single quantum dots

2005 ◽  
Vol 87 (14) ◽  
pp. 143108 ◽  
Author(s):  
Young-Jun Yu ◽  
In-Taek Jeong ◽  
Jong-Chun Woo ◽  
Wonho Jhe
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Near Field ◽  
Single Quantum ◽  
Bimodal Size Distribution ◽  
Field Spectroscopy ◽  
Single Quantum Dots

Red Luminesecnce from Self-Assembled InAlAs/AlGaAs Quantum Dots with Bimodal Size Distribution

1999 ◽  
Vol 16 (4) ◽  
pp. 298-300 ◽  
Author(s):  
Wei Zhou ◽  
Bo Xu ◽  
Huai-zhe Xu ◽  
Feng-qi Liu ◽  
Qian Gong ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Bimodal Size Distribution ◽  
Self Assembled

In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots

2007 ◽  
Vol 31 ◽  
pp. 132-134
Author(s):  
P. Boonpeng ◽  
S. Panyakeow ◽  
S. Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Pl Spectrum

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.

Sign in / Sign up

Export Citation Format

Share Document