Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process
2018 ◽
Vol 51
(22)
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pp. 225102
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2015 ◽
Vol 54
(6S1)
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pp. 06FH11
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2010 ◽
2018 ◽
Vol 57
(6S1)
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pp. 06HD06
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2011 ◽
Vol 50
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pp. 04DD15
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2013 ◽
Vol 30
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pp. 107302
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