Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices

2018 ◽  
Vol 52 (8) ◽  
pp. 085102
Author(s):  
Mizue Ishikawa ◽  
Makoto Tsukahara ◽  
Syuta Honda ◽  
Yuichi Fujita ◽  
Michihiro Yamada ◽  
...  
Author(s):  
Taisei Ariki ◽  
Tatsuya Nomura ◽  
Kohei Ohnishi ◽  
Takashi Kimura

Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.


1996 ◽  
Vol 35 (Part 2, No. 12A) ◽  
pp. L1566-L1568 ◽  
Author(s):  
Tsukuru Ohtoshi ◽  
Atsuko Niwa ◽  
Takao Kuroda

2007 ◽  
Vol 1033 ◽  
Author(s):  
Tomonori Ikegami ◽  
Iwao Kawayama ◽  
Masayoshi Tonouchi ◽  
Yoshiro Yamashita ◽  
Hirokazu Tada

AbstractSpin injection and transport characteristics of low-molecular-weight organic semiconductors such as pentacene and bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) have been studied utilizing lateral type spin-valve devices with half metal electrodes, LaA0.67Sr0.33MnO3 (LSMO). The LSMO electrodes with a spacing of 200 nm were prepared by electron-beam lithography and dry etching of the epitaxial films grown on MgO substrates. The devices showed clear spin-valve behaviors with a magneto-resistance (MR) ratio up to 29 % at 9.1K. It was found that the MR ratio depended on the crystallinity of organic films as well as on temperature and applied bias voltages


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