scholarly journals Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties

Author(s):  
Jessica Afalla ◽  
Elizabeth Ann Prieto ◽  
Horace Andrew Husay ◽  
Karl Cedric Gonzales ◽  
Gerald Catindig ◽  
...  
2020 ◽  
Vol 122 ◽  
pp. 110688 ◽  
Author(s):  
A.M. Buryakov ◽  
M.S. Ivanov ◽  
S.A. Nomoev ◽  
D.I. Khusyainov ◽  
E.D. Mishina ◽  
...  

2018 ◽  
Vol 26 (14) ◽  
pp. 18480 ◽  
Author(s):  
Lingling Ran ◽  
Haiyang Li ◽  
Wenzhi Wu ◽  
Yachen Gao ◽  
Zhijun Chai ◽  
...  

2013 ◽  
Vol 40 (8) ◽  
pp. 219-224 ◽  
Author(s):  
T. M. Burbaev ◽  
A. A. Gorbatsevich ◽  
V. I. Egorkin ◽  
I. P. Kazakov ◽  
V. P. Martovitskii ◽  
...  

Plasmonics ◽  
2013 ◽  
Vol 9 (3) ◽  
pp. 545-551 ◽  
Author(s):  
A. Sieradzki ◽  
M. Basta ◽  
P. Scharoch ◽  
J.-Y. Bigot

1997 ◽  
Vol 105 (1228) ◽  
pp. 1115-1119 ◽  
Author(s):  
Kazuyuki HIRAO ◽  
Hirohisa KANBARA ◽  
Seiji FUJIWARA ◽  
Koichiro TANAKA ◽  
Naoki SUGIMOTO

1999 ◽  
Vol 16 (10) ◽  
pp. 1814 ◽  
Author(s):  
Richard D. Averitt ◽  
Sarah L. Westcott ◽  
Naomi J. Halas

1996 ◽  
Vol 07 (01) ◽  
pp. 125-151 ◽  
Author(s):  
K. I. KANG ◽  
I. GLESK ◽  
P. R. PRUCNAL

The operating principle of the utilization of resonant optical nonlinearities in recently demonstrated ultra-fast all-optical interferometric switching devices is presented. Optimum switching windows expected from these devices are investigated with a simple theoretical analysis. The experimental results of these devices are presented along with the nonlinear optical properties of a semiconductor optical amplifier. The information from the experimental results of the nonlinear optical properties are used to address a problem associated with a saturation of the semiconductor optical amplifier by an incoming ultra-high bit rate data stream. We also discuss the advantages and disadvantages in different operation modes — same or different wavelengths for the control and data signals. Finally, we discuss the relative advantages and disadvantages among these devices.


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