Random dopant fluctuations and statistical variability in n-channel junctionless FETs

2017 ◽  
Vol 29 (2) ◽  
pp. 025203 ◽  
Author(s):  
N D Akhavan ◽  
G A Umana-Membreno ◽  
R Gu ◽  
J Antoszewski ◽  
L Faraone
Keyword(s):  
Random Dopant Fluctuations ◽  
Random Dopant ◽  
Statistical Variability

Impact of LER and Random Dopant Fluctuations on FinFET Matching Performance

2008 ◽  
Vol 7 (3) ◽  
pp. 291-298 ◽  
Author(s):  
E. Baravelli ◽  
M. Jurczak ◽  
N. Speciale ◽  
K. De Meyer ◽  
A. Dixit
Keyword(s):  
Matching Performance ◽  
Random Dopant Fluctuations ◽  
Random Dopant

Variability Effects in Nanowire and Macaroni MOSFETs—Part I: Random Dopant Fluctuations

2020 ◽  
Vol 67 (4) ◽  
pp. 1485-1491 ◽  
Author(s):  
Alessandro S. Spinelli ◽  
Christian Monzio Compagnoni ◽  
Andrea L. Lacaita
Keyword(s):  
Random Dopant Fluctuations ◽  
Random Dopant

Effect of percolation path on temperature dependence of threshold voltage variability in bulk MOSFETs

2021 ◽  
Author(s):  
Tomoko Mizutani ◽  
Kiyoshi Takeuchi ◽  
Takuya Saraya ◽  
Hiroshi Oka ◽  
Takahiro MORI ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Threshold Voltage ◽  
Cryogenic Temperature ◽  
Room Temperature ◽  
Constant Current ◽  
Percolation Path ◽  
Temperature Dependences ◽  
Random Dopant Fluctuations ◽  
Random Dopant

Abstract Threshold voltage variability of bulk MOSFETs was measured at room temperature and cryogenic temperature and compared. It is found that the temperature dependences of threshold voltage defined by extrapolation (VTHEX) and threshold voltage defined by constant current (VTHC) show different behaviors and the percolation path in the channel, which is caused by potential valley due to random dopant fluctuations, weakens the temperature dependence of VTHC.

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