Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation

Author(s):  
R. Tanabe ◽  
Y. Ashizawa ◽  
H. Oka
2011 ◽  
Vol 470 ◽  
pp. 214-217
Author(s):  
Toshiro Hiramoto ◽  
Takuya Saraya ◽  
Chi Ho Lee

The threshold voltage (Vth) variability in fully depleted SOI MOSFETs with intrinsic channel and ultrathin buried oxide under back bias voltage (Vbs) is extensively investigated by three dimensional device simulation. It is found that the Vth variability increases only slightly by applying negative Vbs by the effect of random dopant fluctuation (RDF) in the substrate, while the Vth variability is severely degraded by applying positive Vbs by the effect of the back interface inversion. As a result, there is a certain value of Vbs around 0 V where the Vth variability is minimized.


2008 ◽  
Vol 7 (3) ◽  
pp. 291-298 ◽  
Author(s):  
E. Baravelli ◽  
M. Jurczak ◽  
N. Speciale ◽  
K. De Meyer ◽  
A. Dixit

2020 ◽  
Vol 67 (4) ◽  
pp. 1485-1491 ◽  
Author(s):  
Alessandro S. Spinelli ◽  
Christian Monzio Compagnoni ◽  
Andrea L. Lacaita

2008 ◽  
Vol 55 (7) ◽  
pp. 1720-1726 ◽  
Author(s):  
Xiang-Wei Jiang ◽  
Hui-Xiong Deng ◽  
Jun-Wei Luo ◽  
Shu-Shen Li ◽  
Lin-Wang Wang

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