Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer

Abstract InAs quantum dots (QDs) are grown on an In0.53Ga0.47As interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a Metal Organic Vapor Phase Epitaxy (MOVPE) reactor. Formation of metallic Indium droplets on the In0.53Ga0.47As lattice-matched layer and their crystallization into QDs is demonstrated for the first time in MOVPE. The presence of the In0.53Ga0.47As layer prevents the formation of an unintentional non-stoichiometric 2D layer underneath and around the QDs, via suppression of the As-P exchange. The In0.53Ga0.47As layer affects the surface diffusion leading to a modified droplet crystallization process, where unexpectedly the size of the resulting QDs is found to be inversely proportional to the Indium supply. Bright single dot emission is detected via micro-photoluminescence at low temperature, ranging from 1440 to 1600 nm, covering the technologically relevant telecom C-band. Transmission Electron Microscopy (TEM) investigations reveal buried quantum dots with truncated pyramid shape without defects or dislocations.

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ELECTRON STRUCTURE INVESTIGATIONS OF InGaP/GaAs(100) HETEROSTRUCTURES WITH InP QUANTUM DOTS

International Journal of Nanoscience ◽

10.1142/s0219581x07004468 ◽

2007 ◽

Vol 06 (03n04) ◽

pp. 215-219

Author(s):

E. P. DOMASHEVSKAYA ◽

V. A. TEREKHOV ◽

V. M. KASHKAROV ◽

S. YU. TURISHCHEV ◽

S. L. MOLODTSOV ◽

...

Keyword(s):

Quantum Dots ◽

Emission Spectra ◽

Luminescence Spectra ◽

Partial Density ◽

Edge Structure ◽

X Ray ◽

Metal Organic ◽

Structure Investigations ◽

First Time ◽

Inp Quantum Dots

Ultrasoft X-ray emission spectra (USXES) and X-ray absorption near-edge structure (XANES) spectra with the use of synchrotron radiation in the range of P L2,3-edges were obtained for the first time for nanostructures with InP quantum dots grown on GaAs 〈100〉 substrates by vapor-phase epitaxy from metal–organic compounds. These spectra represent local partial density of states in the valence and conduction bands. The additional XANES peak is detected; its intensity depends on the number of monolayers forming quantum dots. Assumptions are made on the band-to-band origin of luminescence spectra in the studied nanostructures.

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Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2008.07.047 ◽

2008 ◽

Vol 310 (23) ◽

pp. 4751-4753 ◽

Cited By ~ 11

Author(s):

Raimund Kremzow ◽

Markus Pristovsek ◽

Michael Kneissl

Keyword(s):

Quantum Dots ◽

Scanning Tunneling Microscopy ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Inas Quantum Dots ◽

Organic Vapor ◽

Metal Organic

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Preparation of InAs quantum dots on GaAs substrate by metal-organic vapor phase epitaxy using n/sub 2/ as carrier gas

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1436653 ◽

2005 ◽

Author(s):

H. Wang ◽

H.P. Ho

Keyword(s):

Quantum Dots ◽

Vapor Phase ◽

Gaas Substrate ◽

Vapor Phase Epitaxy ◽

Inas Quantum Dots ◽

Carrier Gas ◽

Organic Vapor ◽

Metal Organic

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Coupling of InAs/InP quantum dots to the plasmon resonance of In nanoparticles grown by metal-organic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.4805043 ◽

2013 ◽

Vol 102 (19) ◽

pp. 191111 ◽

Cited By ~ 6

Author(s):

Jiayue Yuan ◽

C. Y. Jin ◽

Matthias Skacel ◽

Adam Urbańczyk ◽

Tian Xia ◽

...

Keyword(s):

Quantum Dots ◽

Vapor Phase ◽

Plasmon Resonance ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Metal Organic ◽

Inp Quantum Dots

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Ordering in GaxIn1−xAsyP1−y Detected by Diffraction Methods

MRS Proceedings ◽

10.1557/proc-417-49 ◽

1995 ◽

Vol 417 ◽

Cited By ~ 3

Author(s):

I. Rechenberg ◽

A. Oster ◽

A. Knauer ◽

U. Richter ◽

J. Menniger ◽

...

Keyword(s):

High Resolution ◽

Miscibility Gap ◽

X Ray Diffraction ◽

Temperature Behaviour ◽

Anomalous Temperature ◽

X Ray ◽

Organic Vapor ◽

Transmission Electron ◽

Metal Organic ◽

Lattice Matched

AbstractGa0.54In0.46As0.12P0.88 lattice matched to GaAs and grown by metal organic vapor phase epitaxy (MOVPE) shows an anomalous temperature behaviour of its cathodoluminescence (CL) emission. Using high resolution x-ray diffraction (HRXRD) and transmission electron diffraction (TED), ordering in this quarternary alloy can be identified as the reason for this behaviour. The ordering follows the same trends with respect to misorientation that are known for InGaP. In addition to ordering, compositional fluctuations related to a miscibility gap are found in this material. In contrast, layers with a higher As-content (y=0.5; y=0.76) do not show properties related to ordering.

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