Shaping of ion energy spectrum due to ionization in ion acceleration driven by an ultra-short pulse laser

2018 ◽  
Vol 60 (11) ◽  
pp. 115007 ◽  
Author(s):  
J Q Yu ◽  
W J Ma ◽  
C Lin ◽  
X Q Yan
Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


1994 ◽  
Author(s):  
Ronnie Shepherd ◽  
Rex Booth ◽  
Dwight Price ◽  
Rosemary Walling ◽  
Richard More ◽  
...  

2005 ◽  
Author(s):  
Andreas Hertwig ◽  
Sven Martin ◽  
Wolfgang Kautek ◽  
Jörg Krüger

2021 ◽  
Vol 38 (3) ◽  
pp. 195-202
Author(s):  
SeokYoung Ji ◽  
Jaegu Kim ◽  
Sung Hak Cho ◽  
Hyungjun Lim ◽  
Won Seok Chang

2015 ◽  
Vol 106 (9) ◽  
pp. 092907 ◽  
Author(s):  
Purevdorj Munkhbaatar ◽  
Zsolt Marton ◽  
Baatarchuluun Tsermaa ◽  
Woo Seok Choi ◽  
Sung S. Ambrose Seo ◽  
...  

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