Pulse quenching based radiation-hardened by design technique for analog single-event transient mitigation on an operational amplifier in 28 nm bulk CMOS process

2020 ◽  
Vol 35 (7) ◽  
pp. 075026
Author(s):  
Jingtian Liu ◽  
Xinyu Xu ◽  
Qian Sun ◽  
Bin Liang ◽  
Jianjun Chen ◽  
...  
Keyword(s):  
Operational Amplifier ◽  
Cmos Process ◽  
Single Event ◽  
Design Technique ◽  
Single Event Transient ◽  
Radiation Hardened ◽  
Radiation Hardened By Design ◽  
28 Nm

Single-Event Transient Error Characterization of a Radiation-Hardened by Design 90 nm SerDes Transmitter Driver

2009 ◽  
Vol 56 (6) ◽  
pp. 3463-3468 ◽  
Author(s):  
S. E. Armstrong ◽  
B. D. Olson ◽  
J. Popp ◽  
J. Braatz ◽  
T. D. Loveless ◽  
...  
Keyword(s):  
Single Event ◽  
Single Event Transient ◽  
Error Characterization ◽  
Radiation Hardened ◽  
Transient Error ◽  
Radiation Hardened By Design

scholarly journals Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1572
Author(s):  
Ehab A. Hamed ◽  
Inhee Lee
Keyword(s):  
Soft Error ◽  
Error Tolerance ◽  
Cmos Process ◽  
Flip Flop ◽  
Single Event Upsets ◽  
Area Overhead ◽  
Fair Comparison ◽  
Reference Design ◽  
Radiation Hardened ◽  
Radiation Hardened By Design

In the previous three decades, many Radiation-Hardened-by-Design (RHBD) Flip-Flops (FFs) have been designed and improved to be immune to Single Event Upsets (SEUs). Their specifications are enhanced regarding soft error tolerance, area overhead, power consumption, and delay. In this review, previously presented RHBD FFs are classified into three categories with an overview of each category. Six well-known RHBD FFs architectures are simulated using a 180 nm CMOS process to show a fair comparison between them while the conventional Transmission Gate Flip-Flop (TGFF) is used as a reference design for this comparison. The results of the comparison are analyzed to give some important highlights about each design.

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