Radiation hardened by design techniques to mitigating P-hit single event transient

Author(s):  
Yihua Chen ◽  
Minghua Tang ◽  
Shaoan Yan ◽  
Wanli Zhang ◽  
Youlin Yin
2009 ◽  
Vol 56 (6) ◽  
pp. 3463-3468 ◽  
Author(s):  
S. E. Armstrong ◽  
B. D. Olson ◽  
J. Popp ◽  
J. Braatz ◽  
T. D. Loveless ◽  
...  

2017 ◽  
Vol 38 (8) ◽  
pp. 085009 ◽  
Author(s):  
Haisong Li ◽  
Longsheng Wu ◽  
Bo Yang ◽  
Yihu Jiang

2012 ◽  
Vol 198-199 ◽  
pp. 1105-1109
Author(s):  
Xin Jie Zhou ◽  
Jing He Wei ◽  
Lei Lei Li

As wide application of EEPROM devices in space and military field, more and more researches focus on its radiation hardened characteristics in international. To improve the single-event effect (SEE) tolerant ability of read-out circuits in the memory, a radiation hardened circuit is designed. The design kernels of radiation hardened latch-flip are given and designed to resist the single-event upset (SEU) effect. A correction circuit is proposed to resist the single-event transient (SET) effect. The performances of this design are: SEU (LET)th ≥ 27 MeV•cm2/mg, SEL(LET)th ≥ 75 MeV•cm2/mg , read out time ≤200 ns. The new design not only satisfied the needs of present work, but supplies a worthful reference for radiation hardened circuit design in future.


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