Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient spectroscopy

2021 ◽  
Vol 36 (5) ◽  
pp. 055015
Author(s):  
Jiaxiang Chen ◽  
Haoxun Luo ◽  
HaoLan Qu ◽  
Min Zhu ◽  
Haowen Guo ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Trap Emission ◽  
Transient Spectroscopy ◽  
Kinetics Of

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

scholarly journals Deep levels in n-type Schottky and p+-n homojunction GaN diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 922-928
Author(s):  
A. Hierro ◽  
D. Kwon ◽  
S. A. Ringel ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Yellow Luminescence ◽  
Arrhenius Behavior ◽  
Electron Level ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

Hydrogen and Lithium Passivation of Gold in Silicon: A Comparative Study

1995 ◽  
Vol 378 ◽  
Author(s):  
E. ö. Sveinbjörnsson ◽  
S. Kristjansson ◽  
O. Engström ◽  
H. P. Gislason
Keyword(s):  
Complex Formation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Opposite Charge ◽  
Active Complex ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
Kinetics Of ◽  
Secondary Ion ◽  
Coulomb Attraction

AbstractWe report studies of passivation of the gold center in silicon by hydrogen and lithium using deep level transient spectroscopy (DLTS), capacitance voltage (CV) profiling and secondary ion mass spectroscopy (SIMS). Both lithium and hydrogen are able to remove the electrical activity of the gold center from the silicon band gap but the passivation mechanisms are different. In the case of lithium the passivation is most likely due to a Coulomb attraction between lithium donors Li+ and gold acceptors Au−. No complex formation is observed between Li+ and Au0. In contrast, hydrogen is able to passivate the gold center without the need of opposite charge states of the species involved. Two Au-H complexes are observed, one (G) electrically active, and another (PA) passive. Based on the annealing kinetics of these complexes we propose that the active complex is a Au-H pair and that the passive complex contains two H atoms (Au-H2).

ECR Hydrogen Plasma Treatment of Si: Defect Activation Under Thermal Anneal

1995 ◽  
Vol 378 ◽  
Author(s):  
C. W. Nam ◽  
S. Ashok
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Schottky Diodes ◽  
Plasma System ◽  
Carrier Trap ◽  
Transient Spectroscopy ◽  
Short Time ◽  
Trap Levels

AbstractSi wafers subject to short-time (4–12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ESR) plasma system have been annealed subsequently in the temperature range 300–750 °C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements of subsequently fabricated Schottky diodes on samples annealed at 450 °C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500 °C and drop substantially beyond 750 °C. This phenomenon appears to be unrelated to the presence of oxygen in Si and is of potential importance in silicon processing technology.

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