Deep‐level transient spectroscopy studies of near‐surface hole and electron traps in Zn‐doped InP using high barrier Yb/p‐InP Schottky diodes

1988 ◽  
Vol 64 (8) ◽  
pp. 3999-4005 ◽  
Author(s):  
A. Singh ◽  
W. A. Anderson
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Near Surface ◽  
Electron Traps ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

Deep–Level Transient Spectroscopy Studies of Czochralski–Grown N–Type Silicon

1993 ◽  
Vol 324 ◽  
Author(s):  
Yutaka Tokuda ◽  
Isao Katoh ◽  
Masayuki Katayama ◽  
Tadasi Hattori
Keyword(s):  
Crystal Growth ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Traps ◽  
Cooling Period ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

AbstractElectron traps in Czochralski–grown n-type (100) silicon with and without donor annihilation annealing have been studied by deep–level transient spectroscopy. A total of eight electron traps are observed in the concentration range 1010 –1011 cm −3. It is thought that these are grown–in defects during crystal growth cooling period including donor annihilation annealing. It is suggested that two electron traps labelled A2 (Ec–0.34 eV) and A3 (Ec–0.38 eV) of these traps are correlated with oxygen–related defects. It is shown that traps A2 and A3 are formed around 400 ° C and disappear around 500–600 ° C.

scholarly journals Deep levels in n-type Schottky and p+-n homojunction GaN diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 922-928
Author(s):  
A. Hierro ◽  
D. Kwon ◽  
S. A. Ringel ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Yellow Luminescence ◽  
Arrhenius Behavior ◽  
Electron Level ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

Deep Electron Traps in AlAs-GaAs Superlattices as Studied by Deep-Level Transient Spectroscopy

1988 ◽  
Vol 27 (Part 1, No. 2) ◽  
pp. 192-195 ◽  
Author(s):  
Kikuo Kobayashi ◽  
Masahiko Morita ◽  
Norihiko Kamata ◽  
Takeo Suzuki
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Traps ◽  
Transient Spectroscopy

Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

1989 ◽  
Vol 4 (2) ◽  
pp. 241-243 ◽  
Author(s):  
Yutaka Tokuda ◽  
Nobuji Kobayashi ◽  
Yajiro Inoue ◽  
Akira Usami ◽  
Makoto Imura
Keyword(s):  
Heat Treatment ◽  
Thermal Stress ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Thermal Donor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

Midgap electron traps in n-type GaAs epitaxial layers grown by the close-spaced vapor transport technique

1991 ◽  
Vol 69 (3-4) ◽  
pp. 407-411 ◽  
Author(s):  
T. Bretagnon ◽  
A. Jean ◽  
P. Silvestre ◽  
S. Bourassa ◽  
R. Le Van Mao ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Emission Rate ◽  
Deep Level ◽  
Vapor Transport ◽  
Epitaxial Layers ◽  
Spectroscopy Technique ◽  
Electron Traps ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Transport Technique

The deep-level transient spectroscopy technique was applied to the study of deep electron traps existing in n-type GaAs epitaxial layers that were prepared by the close-spaced vapor transport technique using three kinds of sources (semi-insulator-undoped, Zn-doped and Si-doped GaAs). Two midgap electron traps labelled ELCS1 and EL2 were observed in all layers regardless of the kind of source used. In addition, the effect of the electric field on the emission rate of ELCS1 is discussed and its identification to ETX2 and EL12 is suggested.

The deep level transient spectroscopy studies of a ZnO varistor as a function of annealing

1988 ◽  
Vol 63 (11) ◽  
pp. 5375-5379 ◽  
Author(s):  
A. Rohatgi ◽  
S. K. Pang ◽  
T. K. Gupta ◽  
W. D. Straub
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Zno Varistor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

Deep level transient spectroscopy studies of n-CdTe and p-CdTe

Solar Cells ◽  
1988 ◽  
Vol 24 (3-4) ◽  
pp. 279-286 ◽  
Author(s):  
W.I. Lee ◽  
N.R. Taskar ◽  
S.K. Ghandhi ◽  
J.M. Borrego
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 1297-1300 ◽  
Author(s):  
Yutaka Tokuda ◽  
Youichi Matsuoka ◽  
Hiroyuki Ueda ◽  
Osamu Ishiguro ◽  
Narumasa Soejima ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Electron Traps ◽  
Majority Carrier ◽  
Sapphire Substrates ◽  
Carrier Traps ◽  
Pn Junctions ◽  
Transient Spectroscopy

Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level transient spectroscopy. MA1 and MA2 are electron traps commonly observed in n GaN on n+ GaN and sapphire substrates. No dislocation-related traps were observed in n GaN on n+ GaN. Among five traps in GaN pn on GaN, MI3 is the main trap with the concentration of 2.5x1015 cm-3.

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