Simulation of current‐voltage characteristics of Ti‐W/nSi Schottky diodes using defects parameters extracted from deep level transient spectroscopy

1991 ◽  
Vol 69 (5) ◽  
pp. 3357-3359 ◽  
Author(s):  
D. Bauza ◽  
G. Pananakakis
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 1167-1170 ◽  
Author(s):  
Vito Raineri ◽  
Fabrizio Roccaforte ◽  
Sebania Libertino ◽  
Alfonso Ruggiero ◽  
V. Massimino ◽  
...  
Keyword(s):  
Leakage Current ◽  
Ion Irradiation ◽  
Deep Level ◽  
Schottky Diodes ◽  
Arrhenius Dependence ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.

Contact-Related Deep States in AI-GaInP/GaAs Interface

1993 ◽  
Vol 325 ◽  
Author(s):  
Z.C. Huang ◽  
C.R. Wie
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Oxygen Contamination ◽  
Related Defect ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Recombination Current

AbstractDeep levels have been measured in molecular beam epitaxy grown Ga0.51In0.49P/GaAs heterostructure by double correlation deep level transient spectroscopy. Gold(Au) and Aluminum (Al) metals were used for Schottky contact. A contact-related hole trap with an activation energy of 0.50-0.75eV was observed at the A1/GaInP interface, but not at the Au/GaInP interface. To our knowledge, this contact-related trap has not been reported before. We attribute this trap to the oxygen contamination, or a vacancy-related defect, VIn or VGa. A new electron trap at 0.28eV was also observed in both Au- and Al-Schottky diodes. Its depth profile showed that it is a bulk trap in GaInP epilayer. The temperature dependent current-voltage characteristics (I-V-T) show a large interface recombination current at the GaInP surface due to the Al-contact. Concentration of the interface trap and the magnitude of recombination current are both reduced by a rapid thermal annealing at/or above 450°C after the aluminum deposition.

Characteristics of deep traps in freestanding GaN

2001 ◽  
Vol 693 ◽  
Author(s):  
Z-Q. Fang ◽  
D.C. Look ◽  
P. Visconti ◽  
C. Lu ◽  
D. Wang ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermionic Emission ◽  
Surface Damage ◽  
Emission Mechanism ◽  
Deep Traps ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Dlts Spectra

AbstractDeep traps in a 300-m m-thick freestanding GaN sample were characterized by deep level transient spectroscopy (DLTS), using Schottky barrier diodes (SBDs) fabricated on the Ga polarity surface. Most of the SBDs show nearly ideal current-voltage characteristics, with both forward and reverse currents controlled by the thermionic emission mechanism. Five common traps, which include A1 (1.0 eV), A (0.66 eV), B (0.59 eV), C (0.35 eV), and D (0.25 eV), can be consistently observed in all SBDs. Two of them, A1 and C, are related to surface damage. Surprisingly, some new traps can be found in the DLTS spectra of some SBDs if higher reverse biases are used in the measurements. However, they cannot be fitted by DLTS simulations, and are likely associated with parasitic capacitance somewhere in the cryostat.

scholarly journals Current--Voltage, Capacitance--Voltage--Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode

2021 ◽  
Vol 55 (4) ◽  
pp. 388
Author(s):  
A. Rabehi ◽  
B. Akkal ◽  
M. Amrani ◽  
S. Tizi ◽  
Z. Benamara ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Double Barrier ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

In this paper, we give a systematical description of Ni|6H-SiC Schottky diode by current--voltage I(V) characteristics at room temperature and capacitance--voltage C(V) characteristics at various frequencies (10-800 kHz) and various temperatures (77-350oK). The I(V) characteristics show a double-barrier phenomenon, which gives a low and high barrier height (phiLbn=0.91 eV, phiHbn=1.55 eV), with a difference of Deltaphibn=0.64 eV. Also, low ideality factor nL=1.94 and high ideality factor nH=1.22 are obtained. The C-V-T measurements show that the barrier height phibn decreases with decreasing of temperature and gives a temperature coefficient alpha=1.0·10-3 eV/K and phibn(T=0 K)=1.32 eV. Deep-level transient spectroscopy (DLTS) has been used to investigate deep levels in the Ni|6H-SiC Schottky diode. The traps signatures such as activation energies Ea=0.50±0.07 eV, capture cross-section sigma=1.8·10-20 cm2, and defect concentration NT=6.2·1013 cm-3 were calculated from Arrhenius plots. Keywords: si1licon carbide, Schottky diodes, I-V, C-V-T, deep-level transient spectroscopy (DLTS).

scholarly journals Deep levels in n-type Schottky and p+-n homojunction GaN diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 922-928
Author(s):  
A. Hierro ◽  
D. Kwon ◽  
S. A. Ringel ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Yellow Luminescence ◽  
Arrhenius Behavior ◽  
Electron Level ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

Electrical Characterization of N+-implanted n-type ZnO Single Crystals: p-n Homojunction and Deep Level Defects

2007 ◽  
Vol 1035 ◽  
Author(s):  
Qilin Gu ◽  
Xuemin Dai ◽  
Chi-Chung Ling ◽  
Shijie Xu ◽  
Liwu Lu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermal Evolution ◽  
Deep Level ◽  
Schottky Diodes ◽  
Control Sample ◽  
Electrical Characterization ◽  
Type Layer ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Induced Defects

AbstractUnintentionally doped n-type ZnO single crystals were implanted by nitrogen ions with different fluences of 1013, 1014 and 1015 cm−2 respectively. ZnO p-n homojunction was successfully fabricated due to the formation of p-type layer after 650°C post-implantation annealing in air for 30 minutes. Further thermal evolution of deep level defects was studied through thermal annealing up to 1200°C. Electrical characterization techniques including current-voltage (I-V), capacitance-voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and double-correlation DLTS (DDLTS) were used for investigating the control sample, all the as-implanted and annealed samples through Au/n-ZnO Schottky diodes as well as ZnO p-n junctions. Detailed electrical properties of fabricated devices and characteristics of implantation induced defects were analyzed based on plentiful DLTS spectra. Moreover, low-temperature photoluminescence experiments of all the as-implanted and annealed samples were performed and the correlation between results from electrical and optical characterizations was discussed.

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