scholarly journals Effect of spin–orbit coupling on atomic-like and delocalized quantum well states in Au overlayers on W(110) and Mo(110)

2013 ◽  
Vol 15 (12) ◽  
pp. 125014 ◽  
Author(s):  
A M Shikin ◽  
A A Rybkina ◽  
M V Rusinova ◽  
I I Klimovskikh ◽  
A G Rybkin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Quantum Well States

Spin-orbit coupling in unoccupied quantum well states: Experiment and theory for Co/Cu(001)

2010 ◽  
Vol 81 (11) ◽  
Author(s):  
Cheng-Tien Chiang ◽  
Aimo Winkelmann ◽  
Ping Yu ◽  
Jürgen Kirschner ◽  
Jürgen Henk
Keyword(s):  
Quantum Well ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Quantum Well States

scholarly journals Interband spin–orbit coupling between anti-parallel spin states in Pb quantum well states

2013 ◽  
Vol 15 (12) ◽  
pp. 125031 ◽  
Author(s):  
Bartosz Slomski ◽  
Gabriel Landolt ◽  
Stefan Muff ◽  
Fabian Meier ◽  
Jürg Osterwalder ◽  
...  
Keyword(s):  
Quantum Well ◽  
Orbit Coupling ◽  
Spin States ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Quantum Well States

SPIN-ORBIT ENHANCED POLARON IN A SINGLE QUANTUM WELL

2011 ◽  
Vol 25 (32) ◽  
pp. 2461-2468
Author(s):  
S. PANDA ◽  
B. K. PANDA
Keyword(s):  
Quantum Well ◽  
Orbit Coupling ◽  
Electron Interaction ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Rashba Spin ◽  
Asymmetric Quantum ◽  
Longitudinal Optic Phonon

The polaronic corrections to the electron energy and effective mass are calculated taking the Rashba spin-orbit coupling in the compositionally asymmetric single quantum well based on heterostructures of narrow gap semiconductors InGaAs and InAs . The electron interaction with the confined longitudinal optic phonon is considered in the Fröhlich form for calculating the polaron properties. In the weak coupling limit, the polaron properties are enhanced by the Rashba spin-orbit coupling in the asymmetric quantum well.

Quantum well thickness dependence of Rashba spin–orbit coupling in the InAs/InGaAs heterostructure

2011 ◽  
Vol 98 (20) ◽  
pp. 202504 ◽  
Author(s):  
Tae Young Lee ◽  
Joonyeon Chang ◽  
Mark C. Hickey ◽  
Hyun Cheol Koo ◽  
Hyung-jun Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thickness Dependence ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin

Effect of Hetero-Interfaces on Rashba Spin-Orbit Coupling in a Gated In0.53Ga0.47As/InP Quantum Well Structure

2011 ◽  
Vol 415-417 ◽  
pp. 1988-1991
Author(s):  
Yuan Ming Zhou
Keyword(s):  
Quantum Well ◽  
Gate Voltage ◽  
Coupling Parameter ◽  
Potential Profile ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Layers ◽  
Quantum Well Structure ◽  
Rashba Spin

We investigate the values of the Rashba spin-orbit coupling parameter α in a gated In0.53Ga0.47As/InP quantum well structure using the k•p formalism. With more positive gate voltage applied, the quantum well potential profile becomes more symmetric and the value of α decreases. The theoretical values of α are much smaller than experimental ones. The discrepancy can be reasonably explained by the neglect of the interface contribution in the k•p formalism and the formation of additional InAsxP1-xand GaxIn1-xAsyP1-yinterfacial layers in our sample.

Field-assisted spin-polarized electron transport through a single quantum well with spin-orbit coupling

2012 ◽  
Vol 21 (3) ◽  
pp. 037302 ◽  
Author(s):  
Xiu-Huan Ding ◽  
Cun-Xi Zhang ◽  
Rui Wang ◽  
Yun-Qing Zhou ◽  
Ling-Min Kong
Keyword(s):  
Electron Transport ◽  
Quantum Well ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Spin Polarized
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