scholarly journals Quantum spin Hall effect and topological phase transition in InNxBiySb1−x−y/InSb quantum wells

2017 ◽  
Vol 19 (7) ◽  
pp. 073031 ◽  
Author(s):  
Zhigang Song ◽  
Sumanta Bose ◽  
Weijun Fan ◽  
Dao Hua Zhang ◽  
Yan Yang Zhang ◽  
...  
Keyword(s):  
Phase Transition ◽  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Spin ◽  
Spin Hall Effect ◽  
Topological Phase ◽  
Quantum Spin Hall Effect ◽  
Topological Phase Transition ◽  
Quantum Spin Hall

scholarly journals Tunable quantum spin Hall effect in double quantum wells

2012 ◽  
Vol 85 (12) ◽  
Author(s):  
Paolo Michetti ◽  
Jan C. Budich ◽  
Elena G. Novik ◽  
Patrik Recher
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Spin ◽  
Spin Hall Effect ◽  
Double Quantum ◽  
Quantum Spin Hall Effect ◽  
Quantum Spin Hall

The robustness of the quantum spin Hall effect to the thickness fluctuation in HgTe quantum wells

2012 ◽  
Vol 21 (11) ◽  
pp. 117301
Author(s):  
Huai-Ming Guo ◽  
Xiang-Lin Zhang ◽  
Shi-Ping Feng
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Spin ◽  
Spin Hall Effect ◽  
Quantum Spin Hall Effect ◽  
Quantum Spin Hall

Fabrication of samples for scanning probe experiments on quantum spin Hall effect in HgTe quantum wells

2012 ◽  
Vol 112 (10) ◽  
pp. 103713 ◽  
Author(s):  
M. Baenninger ◽  
M. König ◽  
A. G. F. Garcia ◽  
M. Mühlbauer ◽  
C. Ames ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Spin ◽  
Spin Hall Effect ◽  
Scanning Probe ◽  
Quantum Spin Hall Effect ◽  
Quantum Spin Hall

scholarly journals Localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells

2014 ◽  
Vol 89 (19) ◽  
Author(s):  
Dong-Hui Xu ◽  
Jin-Hua Gao ◽  
Chao-Xing Liu ◽  
Jin-Hua Sun ◽  
Fu-Chun Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Spin ◽  
Spin Hall Effect ◽  
Quantum Spin Hall Effect ◽  
Si Doped ◽  
Gap States ◽  
Quantum Spin Hall

scholarly journals Quantized spin Hall conductance in a magnetically doped two dimensional topological insulator

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Saquib Shamim ◽  
Wouter Beugeling ◽  
Pragya Shekhar ◽  
Kalle Bendias ◽  
Lukas Lunczer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Spin ◽  
Spin Hall Effect ◽  
Zero Magnetic Field ◽  
Hall Resistance ◽  
Magnetic Impurities ◽  
Quantum Spin Hall Effect ◽  
Magnetically Doped ◽  
Quantum Spin Hall

AbstractSoon after the discovery of the quantum spin Hall effect, it has been predicted that a magnetic impurity in the presence of strong Coulomb interactions will destroy the quantum spin Hall effect. However, the fate of the quantum spin Hall effect in the presence of magnetic impurities has not yet been experimentally investigated. Here, we report the successful experimental demonstration of a quantized spin Hall resistance in HgTe quantum wells dilutely alloyed with magnetic Mn atoms. These quantum wells exhibit an inverted band structure that is very similar to that of the undoped material. Micron sized devices of (Hg,Mn)Te quantum well (in the topological phase) show a quantized spin Hall resistance of h/2e2 at low temperatures and zero magnetic field. At finite temperatures, we observe signatures of the Kondo effect due to interaction between the helical edge channels and magnetic impurities. Our work lays the foundation for future investigations of magnetically doped quantum spin Hall materials towards the realization of chiral Majorana fermions.

scholarly journals Tunable quantum spin Hall effect via strain in two-dimensional arsenene monolayer

2016 ◽  
Vol 49 (5) ◽  
pp. 055305 ◽  
Author(s):  
Ya-ping Wang ◽  
Chang-wen Zhang ◽  
Wei-xiao Ji ◽  
Run-wu Zhang ◽  
Ping Li ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Spin ◽  
Spin Hall Effect ◽  
Two Dimensional ◽  
Quantum Spin Hall Effect ◽  
Quantum Spin Hall

EDGE MAGNETISM AND QUANTUM SPIN HALL EFFECT IN ZIGZAG GRAPHENE NANORIBBON

2013 ◽  
Vol 27 (15) ◽  
pp. 1362011 ◽  
Author(s):  
JUN-WON RHIM ◽  
KYUNGSUN MOON
Keyword(s):  
Electric Field ◽  
Hall Effect ◽  
Graphene Nanoribbon ◽  
Quantum Spin ◽  
Spin Hall Effect ◽  
Nonmonotonic Dependence ◽  
Quantum Spin Hall Effect ◽  
Edge Spin ◽  
Edge Band ◽  
Quantum Spin Hall

We present here a brief review on the remarkable consequences of the flat bands formed at the edges of the Zigzag graphene nanoribbon (ZGNR). The inclusion of the on-site Coulomb interaction is shown to induce the edge spin ferromagnetism, whose spin stiffness demonstrates a nonmonotonic dependence on the lateral electric field. The critical electric field strength corresponds to that of the insulator to half-metal transition. The inclusion of the spin–orbit coupling (SOC) has been believed to generate the quantum spin Hall effect (QSHE) guiding into the interesting new field of topological insulator. By carefully investigating the SOC near the edge, we have shown that the additional σ-edge band gives a marginal perturbation and hence the existence of the QSHE depends on the coupling strength between the π-edge bands and the σ-edge band. We demonstrate that for the charge neutral ZGNR, the QSHE does not occur in the pristine ZGNR, while the hydrogen passivation along the edge may recover the expected feature of the QSHE.

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