scholarly journals Single-ion induced surface modifications on hydrogen-covered Si(001) surfaces - significant difference between slow highly charged and swift heavy ions

2021 ◽  
Author(s):  
Christian Länger ◽  
Philipp Ernst ◽  
Markus Bender ◽  
Daniel Severin ◽  
Christina Trautmann ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Surface Modifications ◽  
Swift Heavy Ions ◽  
Significant Difference

Surface modifications of LiNbO3 single crystals induced by swift heavy ions

1996 ◽  
Vol 107 (1-4) ◽  
pp. 194-198 ◽  
Author(s):  
B. Canut ◽  
S.M.M. Ramos ◽  
R. Brenier ◽  
P. Thevenard ◽  
J.L. Loubet ◽  
...  
Keyword(s):  
Single Crystals ◽  
Heavy Ions ◽  
Surface Modifications ◽  
Swift Heavy Ions

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

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