Dependence of current–voltage characteristics of pseudomorphic AlAs/In 0.53 Ga 0.47 As/InAs resonant tunnelling diodes on quantum well widths

2008 ◽  
Vol 17 (12) ◽  
pp. 4645-4647 ◽  
Author(s):  
Zhang Yang ◽  
Zhang Yu ◽  
Zeng Yi-Ping
Keyword(s):  
Quantum Well ◽  
Resonant Tunnelling ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals High electronic couplings of single mesitylene molecular junctions

2015 ◽  
Vol 6 ◽  
pp. 2431-2437 ◽  
Author(s):  
Yuki Komoto ◽  
Shintaro Fujii ◽  
Tomoaki Nishino ◽  
Manabu Kiguchi
Keyword(s):  
Charge Transport ◽  
Channel Model ◽  
Single Channel ◽  
Molecular Junctions ◽  
Liquid Environment ◽  
Resonant Tunnelling ◽  
Current Voltage ◽  
Electronic Conductance ◽  
Current Voltage Characteristics ◽  
High Conductance

We report on an experimental analysis of the charge transport properties of single mesitylene (1,3,5-trimethylbenzene) molecular junctions. The electronic conductance and the current–voltage characteristics of mesitylene molecules wired into Au electrodes were measured by a scanning tunnelling microscopy-based break-junction method at room temperature in a liquid environment. We found the molecular junctions exhibited two distinct conductance states with high conductance values of ca. 10−1 G 0 and of more than 10−3 G 0 (G 0 = 2e 2/h) in the electronic conductance measurements. We further performed a statistical analysis of the current–voltage characteristics of the molecular junctions in the two states. Within a single channel resonant tunnelling model, we obtained electronic couplings in the molecular junctions by fitting the current–voltage characteristics to the single channel model. The origin of the high conductance was attributed to experimentally obtained large electronic couplings of the direct π-bonded molecular junctions (ca. 0.15 eV). Based on analysis of the stretch length of the molecular junctions and the large electronic couplings obtained from the I–V analysis, we proposed two structural models, in which (i) mesitylene binds to the Au electrode perpendicular to the charge transport direction and (ii) mesitylene has tilted from the perpendicular orientation.

Impacts of ambipolar carrier escape on current-voltage characteristics in a type-I quantum-well solar cell

2013 ◽  
Vol 103 (6) ◽  
pp. 061118 ◽  
Author(s):  
M. Jo ◽  
Y. Ding ◽  
T. Noda ◽  
T. Mano ◽  
Y. Sakuma ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Well ◽  
Type I ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Carrier Escape

Irregular Electron Transport Through a-Si:H Based Potential Barriers

1993 ◽  
Vol 297 ◽  
Author(s):  
Norbert Bernhard ◽  
B. Frank ◽  
B. Movaghar ◽  
G.H. Bauer
Keyword(s):  
Electron Transport ◽  
Transport Mechanism ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Potential Barriers ◽  
Resonant Tunnelling ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
Stable Formation

Irregularities in the current-voltage-characteristics of a-Si:H based potential barriers have been investigated experimentally, and are discussed theoretically with respect to different transport mechanisms. The investigated samples were different series of double and single barrier a-Si:H - a-Si1-xCx:H - heterostructures, as well as homogeneous samples without heterostructure barrier. Current-voltage-(I-V)-characteristics showing a wide variety of features, from complete smoothness of the curves, to bumps and even accidental step-like switching behaviour, as well as different forms of noise, were recorded at different temperatures. Resonant tunnelling as an explaining transport mechanism for the anomalies was excluded because of inconsistency between experiment and calculations partially including special amorphous features. Instead it is argued that all observed irregularities, i. e. bumps in I-V-curves, switching-like behaviour, and appearance of noise, are related to current transport via trap-assisted tunnelling through locally strongly confined transport paths, leading to the meta-stable formation, change and break-down of conductory filaments.

Transition between N- and Z-shaped current-voltage characteristics in semiconductor multiple-quantum-well structures

2006 ◽  
Vol 100 (3) ◽  
pp. 033718 ◽  
Author(s):  
O. V. Pupysheva ◽  
A. V. Dmitriev ◽  
A. A. Farajian ◽  
H. Mizuseki ◽  
Y. Kawazoe
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Current Voltage ◽  
Current Voltage Characteristics

6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy

2005 ◽  
Vol 108-109 ◽  
pp. 713-716 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Alexander A. Lebedev ◽  
A.E. Cherenkov ◽  
Alexey N. Kuznetsov ◽  
Alla S. Tregubova ◽  
...  
Keyword(s):  
Quantum Well ◽  
Free Exciton ◽  
High Current ◽  
Excess Current ◽  
Forward Current ◽  
Current Voltage ◽  
Barrier Type ◽  
Current Voltage Characteristics ◽  
Exciton Annihilation ◽  
Injection Electroluminescence

Investigation of the multilayer 6H(n+)/3C(n)/6H(p+)-SiC heterostructure grown by sublimation epitaxy show that the injection electroluminescence (IEL) in the green region (hνmax≈2.30-2.35eV) of spectrum is dominant. This band is close to the electroluminescence peak due to defects in 6H-SiC but also can be due to free exciton annihilation in a quantum well in 3C-SiC at the 6H/3C-SiC heterointerface. At high current the IEL peak at hνmax≈2.9 eV is found. This peak (and also two another peaks in blue part of spectra: hνmax≈2.6 eV and hνmax≈2.72 eV) can be attributed to recombination in 6H-SiC. The forward current-voltage characteristics for best structures are close to those for ideal 6H-SiC pn homostructure and characterized by abrupt breakdown. A lot of structures are characterized by barrier type excess current. Structure in the region of evident 3C-SiC inclusion is characterized by high forward and reverse excess currents.

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