Ferromagnetism, variable range hopping, and the anomalous Hall effect in epitaxial Co:ZnO thin film

2012 ◽  
Vol 21 (10) ◽  
pp. 107201 ◽  
Author(s):  
Hong-Liang Bai ◽  
Shu-Min He ◽  
Tong-Shuai Xu ◽  
Guo-Lei Liu ◽  
Shi-Shen Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Variable Range Hopping ◽  
Variable Range

Anomalous Hall effect with variable-range hopping in Mn4-xAuxN (x = 0, 0.5) epitaxial films

2020 ◽  
Vol 122 ◽  
pp. 110646
Author(s):  
Dan Li ◽  
Gaili Wang ◽  
Hongwei Li ◽  
Shuxiang Wu ◽  
Shuwei Li
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Epitaxial Films ◽  
Variable Range Hopping ◽  
Variable Range

Variable-range hopping conductivity in thin film of the ladder compound [Ca1+δCu2O3]4

2003 ◽  
Vol 94 (9) ◽  
pp. 5912-5917 ◽  
Author(s):  
K. G. Lisunov ◽  
B. Raquet ◽  
H. Rakoto ◽  
J. M. Broto ◽  
E. Arushanov ◽  
...  
Keyword(s):  
Thin Film ◽  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range

Anomalous Hall Effect of the Co Thin Film Deposited by High-Pressure Magnetron Sputtering

2015 ◽  
Vol 1120-1121 ◽  
pp. 424-428
Author(s):  
C.Y. Zou ◽  
Lai Sen Wang ◽  
Xiang Liu ◽  
Q.F. Zhang ◽  
Jun Bao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Magnetron Sputtering ◽  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect ◽  
Scaling Relation ◽  
Strong Disorder ◽  
Region Temperature ◽  
Localization Region

In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρAxy) have no scaling relation between ρxy and ρxx in weak localization region with temperature below 50 K. In metal region, temperature ranged from 50 K to 300 K, the relation between ρAxy and ρxxis ρAxy=A+bρ2xx, which indicates that the AHE in this Co thin film is scattering-independence at high temperature. The results also shows that the WL effect have a significant impact on the AHE of the Co thin film at low temperature.

Proximity-induced magnetism and an anomalous Hall effect in Bi2Se3/LaCoO3: a topological insulator/ferromagnetic insulator thin film heterostructure

Nanoscale ◽  
2018 ◽  
Vol 10 (21) ◽  
pp. 10041-10049 ◽  
Author(s):  
Shanna Zhu ◽  
Dechao Meng ◽  
Genhao Liang ◽  
Gang Shi ◽  
Peng Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Hall Effect ◽  
Topological Insulator ◽  
Topological Insulators ◽  
Anomalous Hall Effect ◽  
Ferromagnetic Phase ◽  
High Quality

A high-quality Bi2Se3/LaCoO3 heterostructure is fabricated as a new TI/FMI system for investigating a proximity-induced ferromagnetic phase in topological insulators.

Room-Temperature Large Terahertz Anomalous Hall Effect in Weyl Antiferromagnet Mn3Sn Thin Film

2020 ◽  
Author(s):  
Takuya Matsuda ◽  
Natsuki Kanda ◽  
Tomoya Higo ◽  
N. P. Armitage ◽  
Satoru Nakatsuji ◽  
...  
Keyword(s):  
Thin Film ◽  
Hall Effect ◽  
Room Temperature ◽  
Anomalous Hall Effect

Anomalous hall effect in nickel thin film at low temperatures

2019 ◽  
Author(s):  
Mukesh Kumar Dasoundhi ◽  
Rudra Prasad Jena ◽  
Devendra Kumar ◽  
Archana Lakhani
Keyword(s):  
Thin Film ◽  
Hall Effect ◽  
Low Temperatures ◽  
Anomalous Hall Effect

Variable-Range Hopping in Polycrystalline Silicon Thin-Film Transistor

1994 ◽  
Vol 63 (4) ◽  
pp. 1254-1257 ◽  
Author(s):  
Shuichi Ishida ◽  
Sadao Takaoka ◽  
Kazuo Murase ◽  
Seiichi Shirai ◽  
Tadashi Serikawa
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Variable Range Hopping ◽  
Silicon Thin Film ◽  
Variable Range
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