High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

2014 ◽  
Vol 23 (1) ◽  
pp. 017805 ◽  
Author(s):  
Jun-Liang Xing ◽  
Yu Zhang ◽  
Ying-Qiang Xu ◽  
Guo-Wei Wang ◽  
Juan Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quality ◽  
Mid Infrared

High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 306-309 ◽  
Author(s):  
Chunhui Yan ◽  
Dianzhao Sun ◽  
Hongxi Guo ◽  
Xiaobing Li ◽  
Shirong Zu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quality ◽  
Gas Source

scholarly journals UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes

RSC Advances ◽  
2021 ◽  
Vol 11 (62) ◽  
pp. 38949-38955
Author(s):  
Shanshan Chen ◽  
Tengrun Zhan ◽  
Xinhua Pan ◽  
Haiping He ◽  
Jingyun Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Active Layer ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quality ◽  
Light Emitting ◽  
Uv Emission

ZnO/ZnMgO MQWs was employed as an active layer to fabricate p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It showed sharp and efficient UV emission around 370 nm due to constraint of carriers in high-quality MQWs well layer.

scholarly journals Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

2020 ◽  
Vol 217 (7) ◽  
pp. 2070028
Author(s):  
Yaozheng Wu ◽  
Bin Liu ◽  
Zhenhua Li ◽  
Tao Tao ◽  
Zili Xie ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum
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