Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire
2017 ◽
Vol 17
(3)
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pp. 398-402
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Keyword(s):
1998 ◽
Vol 16
(3)
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pp. 1286
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Keyword(s):
Keyword(s):
1999 ◽
2001 ◽
Vol 19
(4)
◽
pp. 1497
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Keyword(s):
Growth of Ga1−xInxAs/GaAs1−yPy multiple quantum well structures by gas source molecular beam epitaxy
1992 ◽
Vol 10
(2)
◽
pp. 949
◽
Keyword(s):