Strain-compensations for interfacial strain and average strain in InGaAs/InAIP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy
Growth of Ga1−xInxAs/GaAs1−yPy multiple quantum well structures by gas source molecular beam epitaxy
1992 ◽
Vol 10
(2)
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pp. 949
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Keyword(s):
1994 ◽
Vol 33
(Part 2, No. 2A)
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pp. L156-L158
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1993 ◽
Vol 127
(1-4)
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pp. 184-188
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Keyword(s):
1999 ◽
Vol 206
(1-2)
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pp. 15-22
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2017 ◽
Vol 17
(3)
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pp. 398-402
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