Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

2015 ◽  
Vol 24 (10) ◽  
pp. 105201 ◽  
Author(s):  
Xiao-Yu Zhang ◽  
Ren-Bing Tan ◽  
Jian-Dong Sun ◽  
Xin-Xing Li ◽  
Yu Zhou ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Electron Mobility ◽  
High Sensitivity ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Readout Circuit ◽  
High Electron Mobility

scholarly journals Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55835-55838 ◽  
Author(s):  
Xiangzhen Ding ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Baojun Wu ◽  
Yimin Hu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Sensitivity ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Sensitive

An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.

An electronic enzyme-linked immunosorbent assay platform for protein analysis based on magnetic beads and AlGaN/GaN high electron mobility transistors

The Analyst ◽  
2020 ◽  
Vol 145 (7) ◽  
pp. 2725-2730 ◽  
Author(s):  
Jin Wang ◽  
Zhiqi Gu ◽  
Xinsheng Liu ◽  
Lei Zhao ◽  
Huoxiang Peng ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Magnetic Beads ◽  
High Sensitivity ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Fast Response ◽  
Enzyme Linked Immunosorbent Assay ◽  
High Electron ◽  
High Electron Mobility ◽  
Detection Of Biomolecules

The AlGaN/GaN high electron mobility transistor (HEMT) biosensors have the characteristics of high sensitivity, stability and fast response in the detection of biomolecules.

Design and Research on a Novel NEMS Accelerated Sensor Based on GaAs PHEMT

2010 ◽  
Vol 97-101 ◽  
pp. 4221-4224
Author(s):  
Bin Zhen Zhang ◽  
Xiao Juan Jia ◽  
Jun Liu ◽  
Chen Yang Xue ◽  
Ting Ting Hou
Keyword(s):  
Electron Mobility ◽  
Sensitive Element ◽  
High Sensitivity ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Main Process ◽  
High Electron ◽  
Micro Machining ◽  
High Electron Mobility ◽  
Saturation Region

A novel nano electro mechanical system (NEMS) accelerated sensor which is based on piezo-resistive effect of GaAs/AlGaAs/InGaAs Pseudomorph-High Electron Mobility Transistor (PHEMT) has been designed and fabricated. The structures of sensor and sensitive element are described in this paper. The main process of Micro-machining is introduced in the text. The static press test has been performed and the testing results show that the NEMS accelerated sensor could sense exterior stress well. Then, a testing circuit is designed to detect the change of drain current under pressure. Through the vibration experiments of the sensor, the sensitivity has been discussed and given out. The conclusion that the sensitivity is maximizing in the saturation region can be got. And the measurement result shows that the sensor has good linearity and high sensitivity with 0.177mV/g in the saturation region.

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