Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz

2012 ◽  
Vol 51 (11R) ◽  
pp. 110203 ◽  
Author(s):  
Faiz Fatah ◽  
Chien-I Kuo ◽  
Heng-Tung Hsu ◽  
Che-Yang Chiang ◽  
Ching-Yi Hsu ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Electron Mobility ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
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