Side-gate effects on the direct current and radio frequency characteristics of AlGaN/GaN high-electron-mobility transistor on Si
2013 ◽
Vol 13
(7)
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pp. 1359-1364
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2000 ◽
Vol 18
(6)
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pp. 2615
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2019 ◽
Vol 217
(7)
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pp. 1900695
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2012 ◽
Vol 51
(11R)
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pp. 110203
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2016 ◽
Vol 10
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pp. 423-432
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2007 ◽
Vol 46
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pp. 6503-6508
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