Side-gate effects on the direct current and radio frequency characteristics of AlGaN/GaN high-electron-mobility transistor on Si

2011 ◽  
Vol 99 (16) ◽  
pp. 163505 ◽  
Author(s):  
Hong Zhou ◽  
Geok Ing Ng ◽  
Zhi Hong Liu ◽  
Subramaniam Arulkumaran
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