Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/27/9/097201 ◽

2018 ◽

Vol 27 (9) ◽

pp. 097201 ◽

Author(s):

Jing Zhang ◽

Hongliang Lv ◽

Haiqiao Ni ◽

Zhichuan Niu ◽

Yuming Zhang

Keyword(s):

Temperature Dependence ◽

Physical Performance ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C

Applied Physics Letters ◽

10.1063/1.3114422 ◽

2009 ◽

Vol 94 (14) ◽

pp. 142105 ◽

Author(s):

Z. H. Liu ◽

S. Arulkumaran ◽

G. I. Ng

Keyword(s):

Temperature Dependence ◽

Ohmic Contact ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

Applied Physics Letters ◽

10.1063/1.4907261 ◽

2015 ◽

Vol 106 (4) ◽

pp. 043505 ◽

Author(s):

Huarui Sun ◽

Miguel Montes Bajo ◽

Michael J. Uren ◽

Martin Kuball

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

Progressive Failure ◽

High Electron Mobility Transistors ◽

High Electron ◽

Weibull Statistics ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Failure Site ◽

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Modeling negative and positive temperature dependence of the gate leakage current in GaN high‐electron mobility transistors

ETRI Journal ◽

10.4218/etrij.2021-0070 ◽

2022 ◽

Author(s):

Ling‐Feng Mao

Keyword(s):

Temperature Dependence ◽

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Positive Temperature ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.1571655 ◽

2003 ◽

Vol 82 (18) ◽

pp. 3110-3112 ◽

Author(s):

S. Arulkumaran ◽

T. Egawa ◽

H. Ishikawa ◽

T. Jimbo

Keyword(s):

Temperature Dependence ◽

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/31/12/125016 ◽

2016 ◽

Vol 31 (12) ◽

pp. 125016 ◽

Author(s):

Mohammad A Alim ◽

Ali A Rezazadeh ◽

Christophe Gaquiere

Keyword(s):

Temperature Dependence ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Temperature dependence of drain current transient response by gate pulse voltage in AlGaN / GaN high electron mobility transistors

TENCON 2017 - 2017 IEEE Region 10 Conference ◽

10.1109/tencon.2017.8228128 ◽

2017 ◽

Author(s):

Akiyoshi Otake ◽

Soya Nakano ◽

Kimihirho Yamanaka ◽

Hirohisa Taguchi

Keyword(s):

Temperature Dependence ◽

Transient Response ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

Pulse Voltage ◽

Current Transient ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2446504 ◽

2015 ◽

Vol 62 (8) ◽

pp. 2475-2480 ◽

Author(s):

Chuan Zhang ◽

Maojun Wang ◽

Bing Xie ◽

Cheng P. Wen ◽

Jinyan Wang ◽

...

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Induced Current ◽

Si Substrate ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Temperature Dependence of Kink Effect for AlGaN/GaN/SiC High Electron Mobility Transistors

ECS Meeting Abstracts ◽

10.1149/ma2012-02/30/2544 ◽

2012 ◽

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.3662041 ◽

2011 ◽

Vol 99 (20) ◽

pp. 203501 ◽

Author(s):

T. Roy ◽

E. X. Zhang ◽

Y. S. Puzyrev ◽

X. Shen ◽

D. M. Fleetwood ◽

...

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

Low Frequency ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Microscopic Origin

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Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2206595 ◽

2012 ◽

Vol 59 (10) ◽

pp. 2667-2674 ◽

Author(s):

Chung-Han Lin ◽

Tyler A. Merz ◽

Daniel R. Doutt ◽

Jungwoo Joh ◽

Jesús A. del Alamo ◽

...

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

Defect Formation ◽

High Electron Mobility Transistors ◽

Nanometer Scale ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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