Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

2003 ◽  
Vol 82 (18) ◽  
pp. 3110-3112 ◽  
Author(s):  
S. Arulkumaran ◽  
T. Egawa ◽  
H. Ishikawa ◽  
T. Jimbo
Keyword(s):  
Temperature Dependence ◽  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors

2002 ◽  
Vol 41 (Part 1, No. 8) ◽  
pp. 5125-5126 ◽  
Author(s):  
Shinya Mizuno ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Koichi Maezawa ◽  
Takashi Mizutani
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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