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Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence
Applied Physics Letters
◽
10.1063/1.4907261
◽
2015
◽
Vol 106
(4)
◽
pp. 043505
◽
Cited By ~ 13
Author(s):
Huarui Sun
◽
Miguel Montes Bajo
◽
Michael J. Uren
◽
Martin Kuball
Keyword(s):
Temperature Dependence
◽
Electron Mobility
◽
Progressive Failure
◽
High Electron Mobility Transistors
◽
High Electron
◽
Weibull Statistics
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Failure Site
◽
State Stress
Download Full-text
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Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Gate Structure
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Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization
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High Electron Mobility Transistors
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Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C
Applied Physics Letters
◽
10.1063/1.3114422
◽
2009
◽
Vol 94
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◽
pp. 142105
◽
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◽
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Temperature Dependence
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Ohmic Contact
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Electron Mobility
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High Electron Mobility Transistors
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High Electron
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High Electron Mobility
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Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
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High Electron Mobility Transistors
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High Electron
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High Electron Mobility
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Electron Mobility Transistors
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◽
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◽
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◽
Surface Defects
◽
High Electron Mobility Transistors
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◽
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Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors
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◽
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◽
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◽
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◽
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◽
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High Electron Mobility Transistors
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◽
Trap Energy
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Effect of the Source Field Plate on AlGaN/GaN High Electron Mobility Transistors during Off-State Stress
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◽
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Keyword(s):
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◽
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Electron Mobility
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High Electron Mobility Transistors
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◽
High Electron
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