Modeling the applicability of linear energy transfer on single event upset occurrence

2013 ◽  
Vol 37 (6) ◽  
pp. 066001 ◽  
Author(s):  
Chao Geng ◽  
Jie Liu ◽  
Zhan-Gang Zhang ◽  
Kai Xi ◽  
Song Gu ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Linear Energy Transfer ◽  
Single Event Upset ◽  
Single Event

SINGLE-EVENT EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS

2004 ◽  
Vol 14 (02) ◽  
pp. 311-325 ◽  
Author(s):  
DALE McMORROW ◽  
JOSEPH S. MELINGER ◽  
ALVIN R. KNUDSON
Keyword(s):  
Energy Transfer ◽  
Integrated Circuits ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Single Event Upset ◽  
Single Event ◽  
Single Event Effects ◽  
Semiconductor Electronics ◽  
Effect Transistor

Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are discussed.

Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors

2014 ◽  
Vol 319 ◽  
pp. 75-78 ◽  
Author(s):  
Manato Deki ◽  
Takahiro Makino ◽  
Naoya Iwamoto ◽  
Shinobu Onoda ◽  
Kazutoshi Kojima ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Linear Energy Transfer ◽  
Single Event ◽  
Mos Capacitors

SEU (Single Event Upset) Vulnerability of the Zilog Z-80 and NSC-800 Microprocessors,

1986 ◽  
Author(s):  
R. Koga ◽  
W. A. Kolasinski ◽  
C. King ◽  
J. Cusick
Keyword(s):  
Single Event Upset ◽  
Single Event
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