Heavy ion linear energy transfer measurements during single event upset testing of electronic devices

1999 ◽  
Vol 46 (1) ◽  
pp. 59-69 ◽  
Author(s):  
V. Zajic ◽  
P. Thieberger
2013 ◽  
Vol 37 (6) ◽  
pp. 066001 ◽  
Author(s):  
Chao Geng ◽  
Jie Liu ◽  
Zhan-Gang Zhang ◽  
Kai Xi ◽  
Song Gu ◽  
...  

2021 ◽  
Vol 120 ◽  
pp. 114128
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Peng-Fei Zhai ◽  
Li Cai ◽  
Tao Liu ◽  
...  

2007 ◽  
Vol 46 (6A) ◽  
pp. 3377-3379
Author(s):  
Yutaka Arita ◽  
Koji Niita ◽  
Yuji Kihara ◽  
Junich Mitsuhasi ◽  
Mikio Takai ◽  
...  

Symmetry ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2030
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Tao Liu ◽  
You-Mei Sun ◽  
Jie Liu

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.


2007 ◽  
Vol 54 (6) ◽  
pp. 2303-2311 ◽  
Author(s):  
P. E. Dodd ◽  
J. R. Schwank ◽  
M. R. Shaneyfelt ◽  
J. A. Felix ◽  
P. Paillet ◽  
...  

1995 ◽  
Vol 34 (2) ◽  
pp. 73-78 ◽  
Author(s):  
A. Kronenberg ◽  
S. Gauny ◽  
K. Criddle ◽  
D. Vannais ◽  
A. Ueno ◽  
...  

PLoS ONE ◽  
2016 ◽  
Vol 11 (7) ◽  
pp. e0160061 ◽  
Author(s):  
Kotaro Ishii ◽  
Yusuke Kazama ◽  
Ryouhei Morita ◽  
Tomonari Hirano ◽  
Tokihiro Ikeda ◽  
...  

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