ZnSe/ITO thin films: candidate for CdTe solar cell window layer

In this work we deposited a Ge thin layer under or upon Cu-Zn-Sn-S precursor by sputtering, followed by selenization process to obtain Ge doped CZTSSe thin films. A comparison of structural, morphology and optoelectrical property on Ge doped CZTSSe thin films with different Ge layer position was studied. It was found that even a little amount of Ge doping could affect the crystallization of CZTSSe grains. The solar cells based on two kinds of precursors both had VOC improvement compared with undoped CZTSSe solar cell. However, due to the inner stress in CZTSSe thin film, cracks appeared between the interface of buffer layer and window layer in CZTSSe solar cell with Ge bottom layer, leading to the decrease of conversion efficiency. With the help of Ge in reducing bulk recombination, CZTSSe solar cell based on Cu-Zn-Sn-S precursor with Ge top layer had a conversion efficiency of 5.38%, in contrast to 3.01% and 4.30% of CZTSSe solar cell with Ge bottom layer and undoped CZTSSe solar cell, respectively.

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Structural and chemical evolution of the CdS:O window layer during individual CdTe solar cell processing steps

Solar Energy ◽

10.1016/j.solener.2017.11.051 ◽

2018 ◽

Vol 159 ◽

pp. 940-946 ◽

Cited By ~ 7

Author(s):

A. Abbas ◽

D.M. Meysing ◽

M.O. Reese ◽

T.M. Barnes ◽

J.M. Walls ◽

...

Keyword(s):

Solar Cell ◽

Chemical Evolution ◽

Window Layer ◽

Cdte Solar Cell ◽

Cell Processing ◽

Processing Steps

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Studies on Nanostructure ITO Thin Films on Silicon Solar Cells

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.678.365 ◽

2013 ◽

Vol 678 ◽

pp. 365-368

Author(s):

Rangasamy Balasundraprabhu ◽

E.V. Monakhov ◽

N. Muthukumarasamy ◽

B.G. Svensson

Keyword(s):

Thin Films ◽

Solar Cells ◽

Solar Cell ◽

Short Circuit ◽

Silicon Solar Cells ◽

Shunt Resistance ◽

Cell Parameters ◽

Ito Film ◽

Ito Thin Films ◽

Ito Films

Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.

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Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

International Journal of Photoenergy ◽

10.1155/2021/8842975 ◽

2021 ◽

Vol 2021 ◽

pp. 1-12

Author(s):

Marwa S. Salem ◽

Omar M. Saif ◽

Ahmed Shaker ◽

Mohamed Abouelatta ◽

Abdullah J. Alzahrani ◽

...

Keyword(s):

Solar Cell ◽

Conversion Efficiency ◽

Performance Optimization ◽

Solar Spectrum ◽

Cell Performance ◽

Window Layer ◽

Electrical Performance ◽

Performance Parameters ◽

Solar Cell Performance ◽

Cell Window

In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided. Secondly, the used device simulator is calibrated with recent experimental results of an InGaP/GaAs DJ solar cell. After that, the optimization of the DJ solar cell performance is carried out for two different materials of the top window layer, AlGaAs and AlGaInP. For AlGaAs, the optimization is carried out for the following: aluminum (Al) mole fraction, top window thickness, top base thickness, and bottom BSF doping and thickness. The electrical performance parameters of the optimized cell are extracted: J SC = 18.23 mA / c m 2 , V OC = 2.33 V , FF = 86.42 % , and the conversion efficiency ( η c ) equals 36.71%. By using AlGaInP as a top cell window, the electrical performance parameters for the optimized cell are J SC = 19.84 mA / c m 2 , V OC = 2.32 V , FF = 83.9 % , and η c = 38.53 % . So, AlGaInP is found to be the optimum material for the InGaP/GaAs DJ cell top window layer as it gives 4% higher conversion efficiency under 1 sun of the standard AM1.5G solar spectrum at 300 K in comparison with recent literature results. All optimization steps and simulation results are carried out using the SLVACO TCAD tool.

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