Investigation on nebulizer spray coated Nd-doped SnS2 thin films for solar cell window layer application

2019 ◽  
Vol 30 (15) ◽  
pp. 13964-13973 ◽  
Author(s):  
A. M. S. Arulanantham ◽  
S. Valanarasu ◽  
S. Rex Rosario ◽  
A. Kathalingam ◽  
Mohd. Shkir ◽  
...  
2019 ◽  
Vol 6 (9) ◽  
pp. 096422 ◽  
Author(s):  
A M S Arulanantham ◽  
S Valanarasu ◽  
S Rex Rosario ◽  
A Kathalingam ◽  
Mohd Shkir ◽  
...  

2017 ◽  
Vol 38 (9) ◽  
pp. 093001 ◽  
Author(s):  
A A Khurram ◽  
M Imran ◽  
Nawazish A Khan ◽  
M Nasir Mehmood

2019 ◽  
Vol 30 (8) ◽  
pp. 8024-8034 ◽  
Author(s):  
S. Sebastian ◽  
I. Kulandaisamy ◽  
S. Valanarasu ◽  
N. Soundaram ◽  
K. Paulraj ◽  
...  

2019 ◽  
Vol 94 (10) ◽  
pp. 1527-1535 ◽  
Author(s):  
S. Santhosh Kumar Jacob ◽  
I. Kulandaisamy ◽  
S. Valanarasu ◽  
A. M. S. Arulanantham ◽  
V. Ganesh ◽  
...  

2019 ◽  
Vol 575 ◽  
pp. 411704 ◽  
Author(s):  
S. Rex Rosario ◽  
I. Kulandaisamy ◽  
K. Deva Arun Kumar ◽  
A.M.S. Arulanantham ◽  
S. Valanarasu ◽  
...  

2017 ◽  
Vol 895 ◽  
pp. 23-27
Author(s):  
Jin Ze Li ◽  
Hong Lie Shen ◽  
Yu Fang Li ◽  
Wei Wang

In this work we deposited a Ge thin layer under or upon Cu-Zn-Sn-S precursor by sputtering, followed by selenization process to obtain Ge doped CZTSSe thin films. A comparison of structural, morphology and optoelectrical property on Ge doped CZTSSe thin films with different Ge layer position was studied. It was found that even a little amount of Ge doping could affect the crystallization of CZTSSe grains. The solar cells based on two kinds of precursors both had VOC improvement compared with undoped CZTSSe solar cell. However, due to the inner stress in CZTSSe thin film, cracks appeared between the interface of buffer layer and window layer in CZTSSe solar cell with Ge bottom layer, leading to the decrease of conversion efficiency. With the help of Ge in reducing bulk recombination, CZTSSe solar cell based on Cu-Zn-Sn-S precursor with Ge top layer had a conversion efficiency of 5.38%, in contrast to 3.01% and 4.30% of CZTSSe solar cell with Ge bottom layer and undoped CZTSSe solar cell, respectively.


2018 ◽  
Vol 1152 ◽  
pp. 137-144 ◽  
Author(s):  
A.M.S. Arulanantham ◽  
S. Valanarasu ◽  
K. Jeyadheepan ◽  
V. Ganesh ◽  
Mohd Shkir

2021 ◽  
Vol 2021 ◽  
pp. 1-12
Author(s):  
Marwa S. Salem ◽  
Omar M. Saif ◽  
Ahmed Shaker ◽  
Mohamed Abouelatta ◽  
Abdullah J. Alzahrani ◽  
...  

In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided. Secondly, the used device simulator is calibrated with recent experimental results of an InGaP/GaAs DJ solar cell. After that, the optimization of the DJ solar cell performance is carried out for two different materials of the top window layer, AlGaAs and AlGaInP. For AlGaAs, the optimization is carried out for the following: aluminum (Al) mole fraction, top window thickness, top base thickness, and bottom BSF doping and thickness. The electrical performance parameters of the optimized cell are extracted: J SC = 18.23   mA / c m 2 , V OC = 2.33   V , FF = 86.42 % , and the conversion efficiency ( η c ) equals 36.71%. By using AlGaInP as a top cell window, the electrical performance parameters for the optimized cell are J SC = 19.84   mA / c m 2 , V OC = 2.32   V , FF = 83.9 % , and η c = 38.53 % . So, AlGaInP is found to be the optimum material for the InGaP/GaAs DJ cell top window layer as it gives 4% higher conversion efficiency under 1 sun of the standard AM1.5G solar spectrum at 300 K in comparison with recent literature results. All optimization steps and simulation results are carried out using the SLVACO TCAD tool.


2011 ◽  
Vol 216 ◽  
pp. 266-270
Author(s):  
Bao Yu Xu ◽  
Hui Dong Yang ◽  
Bo Huang ◽  
Jun Dai Shi

The SiC thin films as the window layer was prepared by PECVD technology in this article, investigated the influence of hydrogen dilution on the optical and micro-structural properties of SiC thin films, Analyzed optical band-gap,deposition rate and surface morphology under different hydrogen dilution ratio, found the optimal growth craft under the same conditions. The results showed that the optical band-gap of the window layer achieved the widest 2.2ev when hydrogen dilution rate was 6.25.


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