Nebulizer spray assisted chemical vapour deposited (NACVD) tin disulfide (SnS2) thin films for solar cell window layer applications

In this work we deposited a Ge thin layer under or upon Cu-Zn-Sn-S precursor by sputtering, followed by selenization process to obtain Ge doped CZTSSe thin films. A comparison of structural, morphology and optoelectrical property on Ge doped CZTSSe thin films with different Ge layer position was studied. It was found that even a little amount of Ge doping could affect the crystallization of CZTSSe grains. The solar cells based on two kinds of precursors both had VOC improvement compared with undoped CZTSSe solar cell. However, due to the inner stress in CZTSSe thin film, cracks appeared between the interface of buffer layer and window layer in CZTSSe solar cell with Ge bottom layer, leading to the decrease of conversion efficiency. With the help of Ge in reducing bulk recombination, CZTSSe solar cell based on Cu-Zn-Sn-S precursor with Ge top layer had a conversion efficiency of 5.38%, in contrast to 3.01% and 4.30% of CZTSSe solar cell with Ge bottom layer and undoped CZTSSe solar cell, respectively.

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Surface Modification of Aerosol-Assisted CVD Produced TiO2Thin Film for Dye Sensitised Solar Cell

International Journal of Photoenergy ◽

10.1155/2014/586707 ◽

2014 ◽

Vol 2014 ◽

pp. 1-12 ◽

Cited By ~ 15

Author(s):

SuPei Lim ◽

Nay Ming Huang ◽

Hong Ngee Lim ◽

M. Mazhar

Keyword(s):

Thin Films ◽

Solar Cell ◽

Conversion Efficiency ◽

Indium Tin Oxide ◽

Particle Deposition ◽

Chemical Vapour ◽

Photocurrent Density ◽

Potential Candidate ◽

Visible Absorption ◽

Ag Particle

We report a simple and convenient method for the preparation of Ag/TiO2thin films supported on indium tin oxide, which was achieved by sonochemical deposition of Ag+on aerosol-assisted chemical vapour deposited TiO2thin films. Posttreatment was performed on the film by immersion in HCl. The as-prepared composite film was characterised by X-ray diffraction, ultraviolet-visible absorption spectroscopy, Raman spectroscopy, and field emission scanning electron microscopy. The photoelectrochemical measurements andJ-Vcharacterisation showed approximately fivefold increase in photocurrent density generation and approximately sevenfold enhancement in dye sensitiser solar cell (DSSC) conversion efficiency, which was achieved after modification of the TiO2film with HCl posttreatment and Ag particle deposition. The improved photocurrent density of 933.30 μA/cm2, as well as DSSC power conversion efficiency of 3.63% with high stability, is an indication that the as-synthesised thin film is a potential candidate for solar energy conversion applications.

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Development of SnS (FTO/CdS/SnS) thin films by nebulizer spray pyrolysis (NSP) for solar cell applications

Journal of Molecular Structure ◽

10.1016/j.molstruc.2017.09.077 ◽

2018 ◽

Vol 1152 ◽

pp. 137-144 ◽

Cited By ~ 16

Author(s):

A.M.S. Arulanantham ◽

S. Valanarasu ◽

K. Jeyadheepan ◽

V. Ganesh ◽

Mohd Shkir

Keyword(s):

Thin Films ◽

Solar Cell ◽

Spray Pyrolysis ◽

Nebulizer Spray Pyrolysis ◽

Sns Thin Films ◽

Nebulizer Spray

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Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

International Journal of Photoenergy ◽

10.1155/2021/8842975 ◽

2021 ◽

Vol 2021 ◽

pp. 1-12

Author(s):

Marwa S. Salem ◽

Omar M. Saif ◽

Ahmed Shaker ◽

Mohamed Abouelatta ◽

Abdullah J. Alzahrani ◽

...

Keyword(s):

Solar Cell ◽

Conversion Efficiency ◽

Performance Optimization ◽

Solar Spectrum ◽

Cell Performance ◽

Window Layer ◽

Electrical Performance ◽

Performance Parameters ◽

Solar Cell Performance ◽

Cell Window

In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided. Secondly, the used device simulator is calibrated with recent experimental results of an InGaP/GaAs DJ solar cell. After that, the optimization of the DJ solar cell performance is carried out for two different materials of the top window layer, AlGaAs and AlGaInP. For AlGaAs, the optimization is carried out for the following: aluminum (Al) mole fraction, top window thickness, top base thickness, and bottom BSF doping and thickness. The electrical performance parameters of the optimized cell are extracted: J SC = 18.23 mA / c m 2 , V OC = 2.33 V , FF = 86.42 % , and the conversion efficiency ( η c ) equals 36.71%. By using AlGaInP as a top cell window, the electrical performance parameters for the optimized cell are J SC = 19.84 mA / c m 2 , V OC = 2.32 V , FF = 83.9 % , and η c = 38.53 % . So, AlGaInP is found to be the optimum material for the InGaP/GaAs DJ cell top window layer as it gives 4% higher conversion efficiency under 1 sun of the standard AM1.5G solar spectrum at 300 K in comparison with recent literature results. All optimization steps and simulation results are carried out using the SLVACO TCAD tool.

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