scholarly journals Highly Sensitive Organic Phototransistors Fabricated from PCPDTBT:PCBM Blend

2021 ◽  
Vol 2070 (1) ◽  
pp. 012040
Author(s):  
Nidhi Yadav ◽  
Nikita Kumari ◽  
Yoshito Ando ◽  
Shyam S Pandey ◽  
Vipul Singh

Abstract Organic phototransistors (OPTs) play a crucial role in various light sensing and imaging applications. In this work, we have fabricated highly sensitive Poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b’]dithiophene)-alt-4,7(2,1,3-benzothiadiazole)] (PCPDTBT)/[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blended thin film based OPTs using ribbon-floating film transfer method. A high charge carrier mobility (μ) of 0.002 cm2V−1s−1 and an Ion/Ioff of 6 × 104 was showcased by the blended polymer thin film based OPT as compared to its pristine polymer thin film based counterpart which had a μ of 0.001 cm2V− 1s−1 and an Ion/Ioff of 9 × 103. Further, the blended polymer thin film based OPT demonstrated a high photosensitivity of 6.6 × 103 and a photoresponsivity of 0.13 A/W towards white light which were much superior than those of many of the previously reported polymer thin film based OPTs. The results hold crucial significance towards the development of cost effective blended polymer thin film based OPTs.

2015 ◽  
Vol 4 (1) ◽  
pp. 169-177 ◽  
Author(s):  
A. Dragoneas ◽  
L. Hague ◽  
M. Grell

Abstract. The presence of multiple independent sensing parameters in a single device is the key conceptual advantage of sensor devices based on an organic thin film transistor (OTFT) over simple organic chemiresistors. Practically, however, these multiple parameters must first be extracted from the electrical characteristics of the OTFTs and, thus, they are not immediately apparent. To exploit the advantage of OTFT sensors, we require a measurement technology to extract these parameters in real time. Here, we introduce an efficient, cost-effective system that is a faster and more compact alternative to the expensive and cumbersome laboratory-based instruments currently available. The characterisation system presented here records the electric behaviour of OTFTs in the form of its "saturated transfer characteristics" multiple times per second for virtually unlimited periods of time, with the option to multiplex up to 20 devices in parallel. By applying a bespoke algorithm to the measured transfer characteristics, the system then extracts, in real time, several underlying transistor parameters (on- and off-current, threshold voltage, and charge carrier mobility). Tests were conducted on the example of a poly(thieno[3,2-b]thiophene) (PBTTT) OTFT exposed to ethanol vapour. The system extracts the underlying OTFT parameters with very low noise without introducing apparent correlations between independent parameters as an artefact.


2019 ◽  
Vol 43 (14) ◽  
pp. 5277-5281 ◽  
Author(s):  
Farshid Shahrokhi ◽  
Yuming Zhao

A double-layer redox-active polymer thin film acts as a highly efficient TNT electrochemical sensor.


2008 ◽  
Vol 6 (2) ◽  
pp. 290-293 ◽  
Author(s):  
Mamtimin Mahmut ◽  
Abliz Yimit ◽  
Abdukadir Abudukayum ◽  
Mariya Mamut ◽  
Kiminori Itoh

2013 ◽  
Vol 481 ◽  
pp. 92-97
Author(s):  
Suntree Sangjan

This research studied ways to increase the stability of a polymer thin film with a thickness of approximately 10 nm. Our system consisted of a polystyrene (PS) thin film filled with three arm polystyrene (TAP) as additives. Formation of dewetting was investigated by atomic force microscopy and optical microscopy which showed that complete dewetting of the pure PS film occurs after being annealed at 120 oC for 5 h. The dewetting dynamics were dramatically suppressed when a small amount of TAP polymer was added into the PS thin film. We hypothesize that the nitrogen atom in the TAP polymer provides dipolarity between the polymeric thin films and the substrate followed by an increase in the interfacial interaction of the TAP/PS thin films, which in turn leads to increased film stability. However, if the concentration of TAP is too high, this leads to phase separation of the thin films. We also observed that the amount of TAP within the PS thin film largely affected the efficiency of inhibiting dewetting. This method could be utilized for the study of the mechanism in a blended polymer film.


2013 ◽  
Vol 773 ◽  
pp. 664-667
Author(s):  
Zhao Jun Guo ◽  
Li Qiang Guo ◽  
Guo Dong Wu

Thin film transistors with nanoparticles silicon floating-gate are fabricated by plasma enhanced chemical vapor deposition. It should be noted that SiO2acts as both a tunneling and a blocking layer. Meanwhile, some np-Si dots are embedded within SiO2layers. The electrical characteristic of the devices are measured by semiconductor parameter analyzer at room temperature. These Thin film transistors show a good device performance with a high charge-carrier mobility of 33 cm2/vs and a large on/off ratio of 1.2×106. Moreover, the capability of written and erasing was demonstrated. This indicates that thin film transistors can be operated as rewritable nonvolatile floating gate memory devices.


COSMOS ◽  
2009 ◽  
Vol 05 (01) ◽  
pp. 59-77
Author(s):  
YUNING LI ◽  
BENG S. ONG

Organic thin film transistors (OTFTs) are promising candidates as alternatives to silicon TFTs for applications where light weight, large area and flexibility are required. OTFTs have shown potential for cost effective fabrication using solution deposition techniques under mild conditions. However, two major issues must be addressed prior to the commercialization of OTFT-based electronics: (i) low charge mobilities and (ii) insufficient air stability. This article reviews recent progress in the design and development of thiophene-based polymer semiconductors as channel materials for OTFTs. To date, both high performance p-type and n-type thiophene-based polymers with benchmark charge carrier mobility of > 0.5 cm2 V-1 s-1 have been archived, which bring printed OTFTs one step closer to commercialization.


2021 ◽  
Author(s):  
Kediliya Wumaier ◽  
Gulgina Mamtmin ◽  
Qingrong Ma ◽  
Asiya Maimaiti ◽  
Patima Nizamidin ◽  
...  

AbstractThe detection of hydrogen sulfide (H2S) is essential because of its toxicity and abundance in the environment. Hence, there is an urgent requisite to develop a highly sensitive and economical H2S detection system. Herein, a zinc phthalocyanine (ZnPc) thin film-based K+-exchanged optical waveguide (OWG) gas sensor was developed for H2S detection by using spin coating. The sensor showed excellent H2S sensing performance at room temperature with a wide linear range (0.1 ppm–500 ppm), reproducibility, stability, and a low detection limit of 0.1 ppm. The developed sensor showed a significant prospect in the development of cost-effective and highly sensitive H2S gas sensors.


2009 ◽  
Vol 1 (11) ◽  
pp. 2660-2666 ◽  
Author(s):  
Qingshuo Wei ◽  
Shoji Miyanishi ◽  
Keisuke Tajima ◽  
Kazuhito Hashimoto

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