scholarly journals Development of techniques for the formation of a planar electric vacuum diode based on an array of CNTs synthesized at the edge of the Co-Nb-N-(O) film

2021 ◽  
Vol 2103 (1) ◽  
pp. 012120
Author(s):  
G S Eritsyan ◽  
D G Gromov ◽  
S V Dubkov ◽  
E P Kitsyuk ◽  
A I Savitskiy ◽  
...  
Keyword(s):  
Electron Emission ◽  
Alloy Film ◽  
Voltage Characteristic ◽  
Diode Structure ◽  
Emission Characteristics ◽  
Current Voltage Characteristic ◽  
Planar Diode ◽  
Current Voltage ◽  
Electric Vacuum ◽  
Technological Route

Abstract This work shows the possibility of forming a planar diode structure based on carbon nanotubes formed on a catalytic alloy film Co-Nb-N-(O). The paper presents a technological route for the formation of a planar diode structure Si/SiO2/Si3N4/Co-Nb-N-(O)/SiO2 and studies the emission characteristics. The current-voltage characteristic of the obtained diode structure in the Fowler-Nordheim coordinates is close to linear in the range from 15 to 22 V, which confirms the phenomenon of electron emission.

An analysis of field-induced hot-electron emission from metal-insulator microstructures on broad-area high-voltage electrodes

1986 ◽  
Vol 403 (1825) ◽  
pp. 285-311 ◽  
Keyword(s):  
Electron Emission ◽  
Voltage Characteristic ◽  
Spectral Shape ◽  
Hot Electron ◽  
Current Voltage Characteristic ◽  
Broad Area ◽  
Metal Insulator ◽  
Resolution Electron ◽  
Current Voltage ◽  
Vacuum Gap

High-resolution electron energy distribution measurements of individual microscopic sites have been used to develop a detailed theoretical model of the field-induced hot-electron emission mechanism responsible for pre-breakdown currents at vacuum-gap fields of 10-30 MV m -1 . The model, which is based on the formation of conducting channels in a metal-insulator-vacuum (m. i. v.) micro-emission régime, has provided experimentally verified quantitative relations for the current-voltage characteristic, spectral shape, and the field-dependence of the spectral full width at half maximum (f. w. h. m.) and shift.

Development and Current-Voltage Characteristic of Arc on AMF Contacts at Different Opening Speeds

2021 ◽  
pp. 1-7
Author(s):  
Alexander A. Logachev ◽  
Irina N. Poluyanova ◽  
Konstantin K. Zabello ◽  
Sergey M. Shkol'nik
Keyword(s):  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Current Voltage

Current oscillations and N-shaped current–voltage characteristic in the manganite Sm1−xSrxMnO3

2004 ◽  
Vol 30 (9) ◽  
pp. 736-738
Author(s):  
I. K. Kamilov ◽  
K. M. Aliev ◽  
Kh. O. Ibragimov ◽  
N. S. Abakarova
Keyword(s):  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Current Voltage ◽  
Current Oscillations

Effects of different tailoring graphene electrodes on the rectification and negative differential resistance of molecular devices

2018 ◽  
Vol 32 (29) ◽  
pp. 1850323
Author(s):  
Ting Ting Zhang ◽  
Cai Juan Xia ◽  
Bo Qun Zhang ◽  
Xiao Feng Lu ◽  
Yang Liu ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Voltage Characteristic ◽  
Molecular Devices ◽  
Current Voltage Characteristic ◽  
Functional Theory ◽  
Current Voltage

The electronic transport properties of oligo p-phenylenevinylene (OPV) molecule sandwiched with symmetrical or asymmetric tailoring graphene nanoribbons (GNRs) electrodes are investigated by nonequilibrium Green’s function in combination with density functional theory. The results show that different tailored GNRs electrodes can modulate the current–voltage characteristic of molecular devices. The rectifying behavior can be observed with respect to electrodes, and the maximum rectification ratio can reach to 14.2 in the asymmetric AC–ZZ GNRs and ZZ–AC–ZZ GNRs electrodes system. In addition, the obvious negative differential resistance can be observed in the symmetrical AC-ZZ GNRs system.

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