Process Corresponding Implications Associated with a Conclusive Model-Fit Current-Voltage Characteristic Curves

NFinFET transistors with various fin widths (110 nm, 115 nm, and 120 nm) are put into measurements, and the data are collected. By using the modified model, the measure data is fitted. Several parameters in the formula of modified model are determined to make both the measured data and the fitting data almost as close as possible. Those parameters are listed and analyzed, including kN (proportional to channel width and gate oxide capacitor, and inversely proportional to the channel length) λ (the inverse of Early Voltage), and sometimes Vth (Threshold Voltage). By kN, the appropriate process control can be high lighted, the corresponding channel concentration can be calculated and thus many implicit physical quantities may be exploited.

EXTRACTION STATIC PARAMETERS SPICE-MODEL OF LED ON THREE POINTS THE CURRENT-VOLTAGE CHARACTERISTIC

A simple method for extracting the static parameters of the SPICE-model of LEDs from three points of current-voltage characteristic proposes. Formulas for calculating the static parameters of the SPICE-model and measurement conditions are given.

RADIATION LOSS DETERMINATION AT COLLISION OF ELECTRONS WITH LECTRONEGATIVE ATOMS AND IONS IN PLASMA CURRENT SWITCH DISCHARGES. PART II

Specific radiation-loss power values have been determined for a variety of electronegative elements (C, O, F, Cl) as functions of electron temperature and impurity particle concentration. The maximum radiation-loss power level has been registered for chlorine (≤770 W/cm3) at an electron/impurity density of 1014 cm-3. The minimum radiation-loss power level for the other three elements lies in the range from 0.4 to 2 W/cm3. Considerable radiation losses due to the presence of electronegative elements in the interelectrode discharge may lead to its destabilization, to the change in the plasma parameters (ne, Te), and eventually, to degradation of the current-voltage characteristic of the plasma current switch.

Research of FIB local milling processes for creation of nanosized field emission structures

The paper presents the results of experimental studies of the influence of the main parameters of a focused ion beam (FIB) during surface profiling on the accuracy of transfer of a pattern to a silicon substrate to create nanoscale field emission structures. In this work, the optimal FIB currents are determined, introducing a minimum amount of distortions during the formation of structures of various sizes. The possibilities of the method of local ion-beam etching of structures in a wide range from 0.1 to 2 μm are shown. The prospects of using this technology for the creation of field emission structures have been demonstrated. It is determived the current-voltage characteristic of the fabricated field-emission cells with a threshold voltage of the onset of emission of ∼ 2.5 V and a maximum current of 300 nA at 30 V.

Analytic theory for current-voltage characteristic of a nanowire radial p-i-n diode

In this article, process of current flow in a nanowire radial p-i-n diode has been considered in detail. It has been shown that cylindrical geometry of the structure gives rise to specific asymmetry of the concentration distribution for current carriers injected to the i-layer, which is opposite to asymmetry that is due to inequality of carriers’ mobilities. This specific asymmetry rises with bringing the i-layer nearer to the nanowire center. Together with that, decrease of the current density in a “long” p-i-n diode and its increase in a “short” p-i-n diode take place (at given forward voltage). And variation of radial thickness of the i-layer demonstrates maximums in the current density at the thickness close to the bipolar diffusion length.

Development of techniques for the formation of a planar electric vacuum diode based on an array of CNTs synthesized at the edge of the Co-Nb-N-(O) film

This work shows the possibility of forming a planar diode structure based on carbon nanotubes formed on a catalytic alloy film Co-Nb-N-(O). The paper presents a technological route for the formation of a planar diode structure Si/SiO2/Si3N4/Co-Nb-N-(O)/SiO2 and studies the emission characteristics. The current-voltage characteristic of the obtained diode structure in the Fowler-Nordheim coordinates is close to linear in the range from 15 to 22 V, which confirms the phenomenon of electron emission.

Analytical versus Metaheuristic Methods to Extract the Photovoltaic Cells and Panel Parameters

The parameters of the photovoltaic cells and panels are very important to forecast the power generated. There are a lot of methods to extract the parameters using analytical, metaheuristic, and hybrid algorithms. The comparison between the widely used analytical method and some of the best metaheuristic algorithms from the algorithm families is made for datasets from the specialized literature, using the following statistical tests: absolute error, root mean square error, and the coefficient of determination. The equivalent circuit and mathematical model considered is the single diode model. The result comparison shows that the metaheuristic algorithms have the best performance in almost all cases, and only for the genetic algorithm, there are poorer results for one chosen photovoltaic cell. The parameters of the photovoltaic cells and panels and also the current-voltage characteristic for real outdoor weather conditions are forecasted using the parameters calculated with the best method: one for analytical—the five-parameter analytical method—and one for the metaheuristic algorithms—hybrid successive discretization algorithm. Additionally, the genetic algorithm is used. The forecast current-voltage characteristic is compared with the one measured in real sunlight conditions, and the best results are obtained in the case of a hybrid successive discretization algorithm. The maximum power forecast using the calculated parameters with the five-parameter method is the best, and the error in comparison with the measured ones is 0.48%.