Cr/- and Fe/n-GaAs Schottky diodes: the stable current-voltage characteristic produced by high-temperature annealing

1999 ◽  
Vol 14 (1) ◽  
pp. 114-117 ◽  
Author(s):  
Ç Nuhoglu ◽  
M Saglam ◽  
A Türüt
Keyword(s):  
High Temperature ◽  
Schottky Diodes ◽  
Voltage Characteristic ◽  
High Temperature Annealing ◽  
Current Voltage Characteristic ◽  
Current Voltage ◽  
Stable Current

PHYSICAL ORIGINS OF 1/f NOISE IN Si δ-DOPED SCHOTTKY DIODES

2014 ◽  
Vol 13 (01) ◽  
pp. 1450003 ◽  
Author(s):  
ALEXEY V. KLYUEV ◽  
EVGENY I. SHMELEV ◽  
ARKADY V. YAKIMOV
Keyword(s):  
Experimental Data ◽  
Schottky Diode ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Voltage Characteristic ◽  
Schottky Junction ◽  
Current Voltage Characteristic ◽  
Impurity Atoms ◽  
Current Voltage

A model of Schottky diode with δ-doping is suggested. The aim is the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance of base and contacts, and the possible leakage are taken into account. Equivalent parameters of the diode are defined from the analysis of the current–voltage characteristic. The model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs – model) and model of 1/f noise in leakage current are suggested for an explanation of experimental data. Our study show that, in the investigated diodes, in a million atomic impurities, there are about 1–10 special impurity atoms with stochastically modulated ionization energy.

Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation

2006 ◽  
Vol 527-529 ◽  
pp. 915-918 ◽  
Author(s):  
Y. Wang ◽  
M.K. Mikhov ◽  
B.J. Skromme
Keyword(s):  
High Temperature ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Extended Defects ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Encapsulation Method ◽  
The Impact

The impact of high temperature annealing using graphite encapsulation (formed by baking photoresist) on the electrical properties of Ni Schottky diodes formed on the annealed surfaces is studied. The surface morphology is also characterized by atomic force microscopy (AFM). Annealing for 10 minutes at temperatures up to 1800 °C with graphite encapsulation actually reduces the high-current ideality factor of the diodes while raising the current-voltage barrier height (linearly extrapolated to unity ideality factor) from 1.453 V to 1.67-1.73 V. Excess leakage current occurs only in a subset of diodes, which are believed to be affected by extended defects. The AFM images show no significant surface roughening, and the graphite can be removed after processing. This encapsulation method is found to be highly effective in preserving the electronic properties of the surface during high temperature annealing.

scholarly journals Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode

2019 ◽  
Vol 963 ◽  
pp. 576-579
Author(s):  
Teng Zhang ◽  
Christophe Raynaud ◽  
Dominique Planson
Keyword(s):  
High Temperature ◽  
Barrier Height ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Metal Contact ◽  
High Temperature Annealing ◽  
Static Characteristics ◽  
Current Voltage ◽  
Capacitance Voltage

Schottky barrier height (SBH) has been characterized on 4H-SiC Schottky diodes with metal contact of Ti/W by Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements between 80 K and 400 K. Multi-barrier has been recognized and calculated according to different models. No clear difference has been found between single barrier diode and diode with multi-barrier from DLTS tests. Evolution on the I-V characteristics has been observed after high temperature annealing. The effect of annealing at room temperature (RT) and high temperature DLTS scan (stress under high temperature) have also been studied on both static characteristics and DLTS results.

Development and Current-Voltage Characteristic of Arc on AMF Contacts at Different Opening Speeds

2021 ◽  
pp. 1-7
Author(s):  
Alexander A. Logachev ◽  
Irina N. Poluyanova ◽  
Konstantin K. Zabello ◽  
Sergey M. Shkol'nik
Keyword(s):  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Current Voltage

Current oscillations and N-shaped current–voltage characteristic in the manganite Sm1−xSrxMnO3

2004 ◽  
Vol 30 (9) ◽  
pp. 736-738
Author(s):  
I. K. Kamilov ◽  
K. M. Aliev ◽  
Kh. O. Ibragimov ◽  
N. S. Abakarova
Keyword(s):  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Current Voltage ◽  
Current Oscillations
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