Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide–semiconductor structures

2001 ◽  
Vol 64 (12) ◽  
Author(s):  
Alexander A. Demkov ◽  
Xiaodong Zhang ◽  
D. A. Drabold
Keyword(s):  
Metal Oxide ◽  
First Principles ◽  
Voltage Characteristic ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Current Voltage Characteristic ◽  
Semiconductor Structures ◽  
Current Voltage

Current‐voltage characteristic of Ti‐pSi metal‐oxide‐semiconductor diodes

1984 ◽  
Vol 56 (8) ◽  
pp. 2309-2314 ◽  
Author(s):  
P. L. Hanselaer ◽  
W. H. Laflère ◽  
R. L. Van Meirhaeghe ◽  
F. Cardon
Keyword(s):  
Metal Oxide ◽  
Voltage Characteristic ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Current Voltage Characteristic ◽  
Current Voltage

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
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