Plasma enhanced chemical vapor deposition of gallium phosphide at low temperature
2021 ◽
Vol 2103
(1)
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pp. 012122
Keyword(s):
Abstract This article is devoted to the formation and study of the properties of amorphous gallium phosphide layers obtained by plasma-chemical deposition at a temperature of 250 °C. The optical and structural properties of the obtained layers on fused silica and silicon substrates were investigated. The possibility of the formation of a homogeneous amorphous gallium phosphide with a smooth surface at a low temperature and low power of RF plasma was shown.
2008 ◽
Vol 8
(19)
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pp. 3523-3527
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1992 ◽
Vol 31
(Part 1, No. 5A)
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pp. 1428-1431
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Low Temperature Synthesis of Diamond Films in Thermoassisted RF Plasma Chemical Vapor Deposition. II
1997 ◽
Vol 36
(Part 1, No. 2)
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pp. 792-797
2015 ◽
Vol 7
(39)
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pp. 21884-21889
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1991 ◽
Vol 30
(Part 2, No. 5B)
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pp. L924-L926
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