Quantum kinetic effects in the optical absorption of semiconductor quantum-dot systems

In this study, the modified effects of stress originating from the dislocation on the substrate to the semiconductor quantum dot growth are investigated by performing an event-based continuous kinetic Monte Carlo simulation, in which the contribution of the dangling bond of the atom is considered. The research results indicate that the change of binding energy initiated by the stress between the deposit atom and the substrate's atoms may significantly influence the atoms' kinetic behaviors, and on the pattern surface the atoms' kinetic effects are very sensitive to the initial condition of the substrate. In addition, the dependence of the atomic kinetics on the growth flux and temperature are also studied. The simulation results are in good qualitative agreement with those of our experiment.

Download Full-text

A computational approach of optical absorption in semiconductor quantum dot superlattices

2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) ◽

10.1109/nano.2015.7388661 ◽

2015 ◽

Author(s):

Giovanni Giannoccaro ◽

Francesco De Leonardis ◽

Vittorio M. N. Passaro

Keyword(s):

Optical Absorption ◽

Quantum Dot ◽

Computational Approach ◽

Semiconductor Quantum Dot

Download Full-text

Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.121-123.1073 ◽

2007 ◽

Vol 121-123 ◽

pp. 1073-1076

Author(s):

C. Zhao ◽

Y.H. Chen ◽

J. Sun ◽

W. Lei ◽

C.X. Cui ◽

...

Keyword(s):

Monte Carlo ◽

Quantum Dot ◽

Molecular Beam ◽

Kinetic Monte Carlo ◽

Growth Conditions ◽

Semiconductor Quantum Dot ◽

Simulation Results ◽

Kinetic Effects ◽

Event Based

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.

Download Full-text

Kinetic Monte Carlo Simulation of the Flux Dependence of Semiconductor Quantum Dot Growth

Materials Science Forum ◽

10.4028/www.scientific.net/msf.663-665.199 ◽

2010 ◽

Vol 663-665 ◽

pp. 199-202

Author(s):

Chang Zhao ◽

Man Zhao ◽

Yi Wang ◽

Ai Jun Lv ◽

Guang Ming Wu

Keyword(s):

Monte Carlo ◽

Quantum Dot ◽

Kinetic Monte Carlo ◽

Growth Conditions ◽

Semiconductor Quantum Dot ◽

Simulation And Experiment ◽

Kinetic Effects ◽

Event Based ◽

Atomic Kinetics

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, all the important kinetic behaviors take place during the growth of the semiconductor material in the molecular beam epitaxy (MBE) system such as deposition, diffusion, desorption, and nucleation are considered, we investigate the effects of the growth conditions which are important to form semiconductor quantum dot (QD) in MBE system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of anisotropy effects to the epitaxy growth of QD. We find that the flux plays an important role in determining the size of the QD. The agreement between our simulation and experiment indicates that this KMC simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs in MBE system.

Download Full-text