Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth

2007 ◽  
Vol 121-123 ◽  
pp. 1073-1076
Author(s):  
C. Zhao ◽  
Y.H. Chen ◽  
J. Sun ◽  
W. Lei ◽  
C.X. Cui ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Kinetic Monte Carlo ◽  
Growth Conditions ◽  
Semiconductor Quantum Dot ◽  
Simulation Results ◽  
Kinetic Effects ◽  
Event Based

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.

Kinetic Monte Carlo Simulation of the Flux Dependence of Semiconductor Quantum Dot Growth

2010 ◽  
Vol 663-665 ◽  
pp. 199-202
Author(s):  
Chang Zhao ◽  
Man Zhao ◽  
Yi Wang ◽  
Ai Jun Lv ◽  
Guang Ming Wu
Keyword(s):  
Monte Carlo ◽  
Quantum Dot ◽  
Kinetic Monte Carlo ◽  
Growth Conditions ◽  
Semiconductor Quantum Dot ◽  
Simulation And Experiment ◽  
Kinetic Effects ◽  
Event Based ◽  
Atomic Kinetics

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, all the important kinetic behaviors take place during the growth of the semiconductor material in the molecular beam epitaxy (MBE) system such as deposition, diffusion, desorption, and nucleation are considered, we investigate the effects of the growth conditions which are important to form semiconductor quantum dot (QD) in MBE system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of anisotropy effects to the epitaxy growth of QD. We find that the flux plays an important role in determining the size of the QD. The agreement between our simulation and experiment indicates that this KMC simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs in MBE system.

Atomic kinetic research of ordered quantum dot growth induced by dislocation on the substrate

2014 ◽  
Vol 28 (05) ◽  
pp. 1450033
Author(s):  
Chang Zhao ◽  
M. Zhao ◽  
Y. Wang ◽  
A. J. Lv ◽  
G. J. Xing ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Kinetic Monte Carlo ◽  
Initial Condition ◽  
Dangling Bond ◽  
Good Qualitative Agreement ◽  
Semiconductor Quantum Dot ◽  
Simulation Results ◽  
Kinetic Effects ◽  
Event Based ◽  
Atomic Kinetics

In this study, the modified effects of stress originating from the dislocation on the substrate to the semiconductor quantum dot growth are investigated by performing an event-based continuous kinetic Monte Carlo simulation, in which the contribution of the dangling bond of the atom is considered. The research results indicate that the change of binding energy initiated by the stress between the deposit atom and the substrate's atoms may significantly influence the atoms' kinetic behaviors, and on the pattern surface the atoms' kinetic effects are very sensitive to the initial condition of the substrate. In addition, the dependence of the atomic kinetics on the growth flux and temperature are also studied. The simulation results are in good qualitative agreement with those of our experiment.

Possibilities of Monte Carlo simulation for examination of nanowhisker growth

2010 ◽  
Vol 82 (11) ◽  
pp. 2017-2025 ◽  
Author(s):  
Alla G. Nastovjak ◽  
Igor G. Neizvestny ◽  
Nataliya L. Shwartz
Keyword(s):  
Monte Carlo ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Whisker Growth ◽  
Kinetic Monte Carlo ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Vapor Liquid Solid ◽  
Whisker Morphology ◽  
Deposition Conditions

The kinetic Monte Carlo (MC) model of nanowhisker (NW) growth is suggested. Two variants of growth are possible in the model—molecular beam epitaxy (MBE) and chemical vapor deposition (CVD). The effect of deposition conditions and growth regimes on the whisker morphology was examined within the framework of the vapor–liquid–solid (VLS) mechanism. A range of model growth conditions corresponding to NW and nanotube formation was determined. The suggested MC model was used for analyses of the morphology of the catalyst–whisker interface and for examination of Si–Ge whisker growth.

MONTE CARLO SIMULATION OF THE KINETICS IN THE GROWTH OF SEMICONDUCTOR QUANTUM DOTS

2011 ◽  
Vol 25 (07) ◽  
pp. 465-471 ◽  
Author(s):  
CHANG ZHAO ◽  
M. ZHAO ◽  
Y. WANG ◽  
A. J. LV ◽  
G. M. WU ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Molecular Beam ◽  
Kinetic Monte Carlo ◽  
Semiconductor Quantum Dots ◽  
Dangling Bond ◽  
Good Qualitative Agreement ◽  
Kinetic Effects ◽  
Selection Of

By means of kinetic Monte Carlo simulation, which is based on the random selection of the surface hops of single adatom, we investigate the atoms' kinetics during the growth of the semiconductor quantum dots in a molecular beam epitaxy system, the deposition, diffusion and nucleation are considered as the main relevant processes during the growth of the quantum dots, taking into account the contribution of the dangling bond of the adatoms in the simulation. The dependence of the quantum dot size on the temperature and flux as well as the atomic kinetic effects are discussed in detail. The simulation results are in good qualitative agreement with those of the experiment.

Vacancy-Mediated Diffusion and Diffusion-Controlled Processes in Ordered Binary Intermetallics by Kinetic Monte Carlo Simulations

2021 ◽  
Vol 29 ◽  
pp. 95-115
Author(s):  
Rafal Kozubski ◽  
Graeme E. Murch ◽  
Irina V. Belova
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Simulation Studies ◽  
Self Diffusion ◽  
Monte Carlo Techniques ◽  
Diffusion Controlled ◽  
Kinetic Monte Carlo Simulations ◽  
Kinetic Effects ◽  
Kinetics Of ◽  
And Diffusion

We review the results of our Monte Carlo simulation studies carried out within the past two decades in the area of atomic-migration-controlled phenomena in intermetallic compounds. The review aims at showing the high potential of Monte Carlo methods in modelling both the equilibrium states of the systems and the kinetics of the running processes. We focus on three particular problems: (i) the atomistic origin of the complexity of the ‘order-order’ relaxations in γ’-Ni3Al; (ii) surface-induced ordering phenomena in γ-FePt and (iii) ‘order—order’ kinetics and self-diffusion in the ‘triple-defect’ β-NiAl. The latter investigation demonstrated how diverse Monte Carlo techniques may be used to model the phenomena where equilibrium thermodynamics interplays and competes with kinetic effects.

scholarly journals Kinetic Monte Carlo Simulation of Clustering in an Al-Mg-Si-Cu Alloy

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4523
Author(s):  
Qilu Ye ◽  
Jianxin Wu ◽  
Jiqing Zhao ◽  
Gang Yang ◽  
Bin Yang
Keyword(s):  
Activation Energy ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Complex Interaction ◽  
Cu Alloy ◽  
Cu Alloys ◽  
Simulation Results ◽  
Small Clusters ◽  
First Time

The mechanism of the clustering in Al-Mg-Si-Cu alloys has been a long-standing controversial issue. Here, for the first time, the mechanism of the clustering in the alloy was investigated by a Kinetic Monte Carlo (KMC) approach. In addition, reversion aging (RA) was carried out to evaluate the simulation results. The results showed that many small-size clusters formed rapidly in the early stages of aging. With the prolongation of aging time, the clusters merged and grew. The small clusters formed at the beginning of aging in Al-Mg-Si-Cu alloy were caused by initial vacancies (quenching vacancies). The merging and decomposition of the clusters were mainly caused by the capturing of vacancies, and the clusters had a probability to decompose before reaching a stable size. After repeated merging and decomposition, the clusters reach stability. During RA, the complex interaction between the cluster merging and decomposition leaded to the partial irregular change of the hardness reduction and activation energy.

Formation of embedded Co nanostructures in Cu(001) surface under electromigration

2020 ◽  
pp. 2150090
Author(s):  
S. V. Kolesnikov ◽  
A. L. Klavsyuk ◽  
A. M. Saletsky
Keyword(s):  
Monte Carlo ◽  
Current Density ◽  
Kinetic Monte Carlo ◽  
The Self ◽  
Atomic Scale ◽  
Self Organization ◽  
Simulation Results ◽  
Self Learning

Formation of embedded Co nanostructures in Cu(001) surface under electromigration is investigated on the atomic scale by performing self-learning kinetic Monte Carlo (kMC) simulations. The analysis of simulation results reveals the following important result. The electromigration of vacancies does not influence on the self-organization of Co nanostructures in the first layer of Cu(001) surface at all values of current density, which can be achieved in experiments.

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