Atomic kinetic research of ordered quantum dot growth induced by dislocation on the substrate

In this study, the modified effects of stress originating from the dislocation on the substrate to the semiconductor quantum dot growth are investigated by performing an event-based continuous kinetic Monte Carlo simulation, in which the contribution of the dangling bond of the atom is considered. The research results indicate that the change of binding energy initiated by the stress between the deposit atom and the substrate's atoms may significantly influence the atoms' kinetic behaviors, and on the pattern surface the atoms' kinetic effects are very sensitive to the initial condition of the substrate. In addition, the dependence of the atomic kinetics on the growth flux and temperature are also studied. The simulation results are in good qualitative agreement with those of our experiment.