Kinetic Monte Carlo Simulation of the Flux Dependence of Semiconductor Quantum Dot Growth

2010 ◽  
Vol 663-665 ◽  
pp. 199-202
Author(s):  
Chang Zhao ◽  
Man Zhao ◽  
Yi Wang ◽  
Ai Jun Lv ◽  
Guang Ming Wu
Keyword(s):  
Monte Carlo ◽  
Quantum Dot ◽  
Kinetic Monte Carlo ◽  
Growth Conditions ◽  
Semiconductor Quantum Dot ◽  
Simulation And Experiment ◽  
Kinetic Effects ◽  
Event Based ◽  
Atomic Kinetics

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, all the important kinetic behaviors take place during the growth of the semiconductor material in the molecular beam epitaxy (MBE) system such as deposition, diffusion, desorption, and nucleation are considered, we investigate the effects of the growth conditions which are important to form semiconductor quantum dot (QD) in MBE system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of anisotropy effects to the epitaxy growth of QD. We find that the flux plays an important role in determining the size of the QD. The agreement between our simulation and experiment indicates that this KMC simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs in MBE system.

Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth

2007 ◽  
Vol 121-123 ◽  
pp. 1073-1076
Author(s):  
C. Zhao ◽  
Y.H. Chen ◽  
J. Sun ◽  
W. Lei ◽  
C.X. Cui ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Kinetic Monte Carlo ◽  
Growth Conditions ◽  
Semiconductor Quantum Dot ◽  
Simulation Results ◽  
Kinetic Effects ◽  
Event Based

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.

Atomic kinetic research of ordered quantum dot growth induced by dislocation on the substrate

2014 ◽  
Vol 28 (05) ◽  
pp. 1450033
Author(s):  
Chang Zhao ◽  
M. Zhao ◽  
Y. Wang ◽  
A. J. Lv ◽  
G. J. Xing ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Kinetic Monte Carlo ◽  
Initial Condition ◽  
Dangling Bond ◽  
Good Qualitative Agreement ◽  
Semiconductor Quantum Dot ◽  
Simulation Results ◽  
Kinetic Effects ◽  
Event Based ◽  
Atomic Kinetics

In this study, the modified effects of stress originating from the dislocation on the substrate to the semiconductor quantum dot growth are investigated by performing an event-based continuous kinetic Monte Carlo simulation, in which the contribution of the dangling bond of the atom is considered. The research results indicate that the change of binding energy initiated by the stress between the deposit atom and the substrate's atoms may significantly influence the atoms' kinetic behaviors, and on the pattern surface the atoms' kinetic effects are very sensitive to the initial condition of the substrate. In addition, the dependence of the atomic kinetics on the growth flux and temperature are also studied. The simulation results are in good qualitative agreement with those of our experiment.

Vacancy-Mediated Diffusion and Diffusion-Controlled Processes in Ordered Binary Intermetallics by Kinetic Monte Carlo Simulations

2021 ◽  
Vol 29 ◽  
pp. 95-115
Author(s):  
Rafal Kozubski ◽  
Graeme E. Murch ◽  
Irina V. Belova
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Simulation Studies ◽  
Self Diffusion ◽  
Monte Carlo Techniques ◽  
Diffusion Controlled ◽  
Kinetic Monte Carlo Simulations ◽  
Kinetic Effects ◽  
Kinetics Of ◽  
And Diffusion

We review the results of our Monte Carlo simulation studies carried out within the past two decades in the area of atomic-migration-controlled phenomena in intermetallic compounds. The review aims at showing the high potential of Monte Carlo methods in modelling both the equilibrium states of the systems and the kinetics of the running processes. We focus on three particular problems: (i) the atomistic origin of the complexity of the ‘order-order’ relaxations in γ’-Ni3Al; (ii) surface-induced ordering phenomena in γ-FePt and (iii) ‘order—order’ kinetics and self-diffusion in the ‘triple-defect’ β-NiAl. The latter investigation demonstrated how diverse Monte Carlo techniques may be used to model the phenomena where equilibrium thermodynamics interplays and competes with kinetic effects.

Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures

2006 ◽  
Vol 100 (8) ◽  
pp. 084313 ◽  
Author(s):  
M. Gurioli ◽  
M. Zamfirescu ◽  
A. Vinattieri ◽  
S. Sanguinetti ◽  
E. Grilli ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Semiconductor Quantum Dot
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