Theoretical estimation of optical absorption coefficient inside an InAs/InGaAs semiconductor Quantum Dot

Author(s):  
Sadreddin Behjati Ardakani ◽  
Hassan. Kaatuzian
2010 ◽  
Vol 19 (01) ◽  
pp. 131-143 ◽  
Author(s):  
G. REZAEI ◽  
M. R. K. VAHDANI ◽  
M. BARATI

Intersubband optical absorption coefficient and refractive index changes of a weakly prolate ellipsoidal quantum dot, using the compact-density matrix formalism and iterative method, are investigated. In this regard, the linear and nonlinear intersubband optical absorption coefficient and refractive index changes of a GaAs / Al x Ga 1-x As ellipsoidal quantum dot, as functions of the dot radius, ellipticity constant, stoichiometric ratio and incident light intensity are calculated. The results indicate that absorption coefficient and refractive index changes strongly depend on the light intensity, size and geometry of the dot and structure parameters such as aluminium concentration in GaAs / Al x Ga 1-x As structures.


2009 ◽  
Vol 23 (14) ◽  
pp. 3179-3186 ◽  
Author(s):  
RUI-ZHEN WANG ◽  
KANG-XIAN GUO ◽  
BIN CHEN ◽  
YUN-BAO ZHENG

The intersubband optical absorption in cylindrical quantum dot quantum well (QDQW) for different sizes of QDQW is theoretically studied. The analytical expression of the absorption coefficient is derived by using the compact density-matrix approach and the iterative method. And the numerical calculations are presented for a typical GaAs / AlGaAs QDQW. The results obtained show that the optical absorption coefficient in the QDQW can be importantly modified by size of shell well. Moreover, they also show that the optical absorption is strongly dependent on the incident optical intensity.


Sign in / Sign up

Export Citation Format

Share Document