scholarly journals Characterization of photon counting pixel detectors based on semi-insulating GaAs sensor material

2013 ◽  
Vol 425 (6) ◽  
pp. 062015 ◽  
Author(s):  
E Hamann ◽  
A Cecilia ◽  
A Zwerger ◽  
A Fauler ◽  
O Tolbanov ◽  
...  
Keyword(s):  
Photon Counting ◽  
Sensor Material ◽  
Pixel Detectors

Characterization of the imaging performance of a micro-CT system based on the photon counting XPAD3/Si hybrid pixel detectors

2016 ◽  
Vol 2 (2) ◽  
pp. 025003 ◽  
Author(s):  
F Cassol ◽  
M Dupont ◽  
C Kronland-Martinet ◽  
H Ouamara ◽  
A Dawiec ◽  
...  
Keyword(s):  
Photon Counting ◽  
Micro Ct ◽  
Pixel Detectors ◽  
Ct System ◽  
Imaging Performance

scholarly journals Noise and Breakdown Characterization of SPAD Detectors with Time-Gated Photon-Counting Operation

Sensors ◽  
2021 ◽  
Vol 21 (16) ◽  
pp. 5287
Author(s):  
Hiwa Mahmoudi ◽  
Michael Hofbauer ◽  
Bernhard Goll ◽  
Horst Zimmermann
Keyword(s):  
Breakdown Voltage ◽  
Single Photon ◽  
Photon Counting ◽  
Low Noise ◽  
Dark Count ◽  
Fully Integrated ◽  
Trade Offs ◽  
And Performance ◽  
Noise Models

Being ready-to-detect over a certain portion of time makes the time-gated single-photon avalanche diode (SPAD) an attractive candidate for low-noise photon-counting applications. A careful SPAD noise and performance characterization, however, is critical to avoid time-consuming experimental optimization and redesign iterations for such applications. Here, we present an extensive empirical study of the breakdown voltage, as well as the dark-count and afterpulsing noise mechanisms for a fully integrated time-gated SPAD detector in 0.35-μm CMOS based on experimental data acquired in a dark condition. An “effective” SPAD breakdown voltage is introduced to enable efficient characterization and modeling of the dark-count and afterpulsing probabilities with respect to the excess bias voltage and the gating duration time. The presented breakdown and noise models will allow for accurate modeling and optimization of SPAD-based detector designs, where the SPAD noise can impose severe trade-offs with speed and sensitivity as is shown via an example.

scholarly journals Measurement of synchrotron-radiation-excited Kossel patterns

2016 ◽  
Vol 23 (1) ◽  
pp. 214-218 ◽  
Author(s):  
G. Bortel ◽  
G. Faigel ◽  
M. Tegze ◽  
A. Chumakov
Keyword(s):  
High Resolution ◽  
Dynamic Range ◽  
Structural Information ◽  
Photon Counting ◽  
Spot Size ◽  
Low Noise ◽  
X Rays ◽  
Technical Problems ◽  
Pixel Detectors ◽  
Exciting Beam

Kossel line patterns contain information on the crystalline structure, such as the magnitude and the phase of Bragg reflections. For technical reasons, most of these patterns are obtained using electron beam excitation, which leads to surface sensitivity that limits the spatial extent of the structural information. To obtain the atomic structure in bulk volumes, X-rays should be used as the excitation radiation. However, there are technical problems, such as the need for high resolution, low noise, large dynamic range, photon counting, two-dimensional pixel detectors and the small spot size of the exciting beam, which have prevented the widespread use of Kossel pattern analysis. Here, an experimental setup is described, which can be used for the measurement of Kossel patterns in a reasonable time and with high resolution to recover structural information.

Two-dimensional photon counting imaging and spatiotemporal characterization of ultraweak photon emission from a rat’s brain in vivo

1999 ◽  
Vol 93 (2) ◽  
pp. 163-168 ◽  
Author(s):  
Masaki Kobayashi ◽  
Motohiro Takeda ◽  
Ken-Ichi Ito ◽  
Hiroshi Kato ◽  
Humio Inaba
Keyword(s):  
Photon Emission ◽  
Photon Counting ◽  
Two Dimensional

Characterization of Sphinx1 ASIC X-ray detector using photon counting and charge integration

2018 ◽  
Vol 13 (01) ◽  
pp. P01024-P01024
Author(s):  
A. Habib ◽  
M. Arques ◽  
J.-L. Moro ◽  
M. Accensi ◽  
S. Stanchina ◽  
...  
Keyword(s):  
Photon Counting ◽  
X Ray ◽  
Charge Integration

Robust window discriminator for photon-counting pixel detectors

2002 ◽  
Vol 149 (2) ◽  
pp. 65-69 ◽  
Author(s):  
B. Oelmann ◽  
M. Abdalla ◽  
M. O'Nils
Keyword(s):  
Photon Counting ◽  
Pixel Detectors

Pixel readout IC for CdTe detectors operating in single photon counting mode with interpixel communication

2022 ◽  
Vol 17 (01) ◽  
pp. C01036
Author(s):  
P. Grybos ◽  
R. Kleczek ◽  
P. Kmon ◽  
A. Krzyzanowska ◽  
P. Otfinowski ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Single Photon ◽  
Photon Counting ◽  
Recognition Algorithm ◽  
Total Charge ◽  
Readout Integrated Circuit ◽  
Single Photon Counting ◽  
X Ray ◽  
Pixel Detectors ◽  
Photon Counting Mode

Abstract This paper presents a readout integrated circuit (IC) of pixel architecture called MPIX (Multithreshold PIXels), designed for CdTe pixel detectors used in X-ray imaging applications. The MPIX IC area is 9.6 mm × 20.3 mm and it is designed in a CMOS 130 nm process. The IC core is a matrix of 96 × 192 square-shaped pixels of 100 µm pitch. Each pixel contains a fast analog front-end followed by four independently working discriminators and four 12-bit ripple counters. Such pixel architecture allows photon processing one by one and selecting the X-ray photons according to their energy (X-ray colour imaging). To fit the different range of applications the MPIX IC has 8 possible different gain settings, and it can process the X-ray photons of energy up to 154 keV. The MPIX chip is bump-bonded to the CdTe 1.5 mm thick pixel sensor with a pixel pitch of 100 µm. To deal with the charge sharing effect coming from a thick semiconductor pixel sensor, multithreshold pattern recognition algorithm is implemented in the readout IC. The implemented algorithm operates both in the analog domain (to recover the total charge spread between neighboring pixels, when a single X-ray photon hits the border of the pixel) and in the digital domain (to allocate a hit position to a single pixel).

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